Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.
Radiation recombination heterostructures transform↗