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Dowling, Karen M.

Publications and source records attributed to Dowling, Karen M..

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

We present iron-doped beta gallium oxide (Fe- β Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- β Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. Here, we then demonstrated pulsed operation of a Fe- β Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- β Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of 7×10 -7 A-cm/W-kV at room temperature and up to 5.5×10 -4 A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- β Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.

42 ENGINEERING↗
DOE OSTI2022

Design considerations for gallium arsenide pulse compression photoconductive switch

In this paper, we present the physics and design-space exploration of a novel pulse compression photoconductive switch (PCPS) using semi-insulating gallium arsenide (GaAs) operating in the negative differential mobility (NDM) regime of electron transport. We systematically quantify the relationship between the PCPS performance and various design options, including contact separation, laser energy and placement, and trap dynamics. Specifically, we report the full-width at half-maximum and the peak output current generated by the PCPS as a function of applied electrical and optical bias. We discuss the optimal spacing between the electrodes and the distance of the laser spot to the anode to achieve higher electron confinement and superior radio-frequency (RF) metrics. Reducing the laser energy is important to prevent the appearance of secondary peaks due to diffusive transport, but there exists a trade-off between the bandwidth and the maximum current of the PCPS. We also compare the PCPS response with and without trap dynamics and find that the electrostatic screening from the trap-induced space charge is time-independent when the trapping time constant is set larger than the recombination lifetime. Overall, trap dynamics are detrimental to performance, unless the compensation doping scheme to achieve semi-insulating GaAs is carefully selected. Results presented in this paper can be used by experimentalists to fine-tune the PCPS design parameters to meet the specifications of various RF applications. Moreover, our results will provide a strong theoretical basis to the measurements of PCPS devices using GaAs and other NDM materials under investigation.

42 ENGINEERING↗
DOE OSTI2020

Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

This article presents GaN two-dimensional electron gas (2DEG) Hall plates with low residual offset and noise at 3 V input bias. We studied devices made from three consecutive fabrication generations through current spinning offset measurements in a zero-field chamber. When operated above 1 V, the first-generation devices charted high residual offsets >1 mT. We reduced these residual offsets by three orders of magnitude in later device generations. Two experiments were performed to confirm the improvements. First, the GaN 2DEG Hall-effect plates were measured with infrared microscopy during current spinning to investigate current crowding and Joule heating. The low offset devices had minimal thermal gradients while the high offset devices had large thermal variations during current spinning. Second, zero-field current spinning was used to compare GaN 2DEG Hall-effect plates against typical commercial silicon Hall-effect plates. The Si devices had residual offsets >10μT biased at 3 V and AlGaN/GaN devices had residual offset <4 μT at 3 V, and an InAlN/GaN devices operated at 2 V had a residual offset <4 μT . Thus, for the first time, GaN 2DEG Hall-effect plates were shown to operate with high bias with low offsets and noise, which enables high fidelity sensing applications in extreme environments.

2DEG↗