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Driver, M. Sky

Publications and source records attributed to Driver, M. Sky.

Nucleation of graphene layers on magnetic oxides: Co 3 O 4 (111) and Cr 2 O 3 (0001) from theory and experiment

We report directly grown strongly adherent graphene on Co 3 O 4 (111) by carbon molecular beam epitaxy (C MBE) at 850 K and density functional theory (DFT) findings that the first graphene layer is reconstructed to fit the Co 3 O 4 surface, while subsequent layers retain normal graphene structure. This adherence to the Co 3 O 4 structure results from partial bonding of half the carbons to top oxygens of the substrate. This structure is validated by X-ray photoelectron spectroscopy and low-energy electron diffraction studies, showing layer-by-layer graphene growth with ~0.08 electrons/carbon atom transferred to the oxide from the first graphene layer, in agreement with DFT. In contrast, for Cr 2 O 3 DFT finds no strong bonding to the surface and C MBE on Cr 2 O 3 (0001) yields only graphite formation at 700 K, with C desorption above 800 K. As a result, strong graphene-to-oxide charge transfer aids nucleation of graphene on incommensurate oxide substrates and may have implications for spintronics.

36 MATERIALS SCIENCE↗

Work function characterization of solution-processed cobalt silicide

Cobalt silicide thin films were prepared by spin-coating Si6H12-based inks onto various substrates followed by a thermal treatment. The work function of the solution processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoelectron spectroscopy (UPS). The UPS-derived work function was 4.80 eV for a Co-Si film on Si (100) while C-V of MOS structures yielded a work function of 4.36 eV where the metal was solution-processed Co-Si, the oxide was SiO2 and the semiconductor was a B-doped Si wafer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗