Engineering topics

Duan, Jianan (ORCID:0000000177104287)

Publications and source records attributed to Duan, Jianan (ORCID:0000000177104287).

3 records

DOE OSTI2021

Dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch

This work reports on a high-efficiency InAs/GaAs distributed feedback quantum dot laser. The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static, dynamic, and nonlinear intrinsic properties to all improve with temperature, including the lasing efficiency, the modulation dynamics, the linewidth enhancement factor, and consequently the reflection insensitivity. Results reported show an optimum operating temperature at 75°C, highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits.

Dong, Bozhang (ORCID:0000000158266723)↗

DOE OSTI2020

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Duan, Jianan (ORCID:0000000177104287)↗

DOE OSTI2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Abstract This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

Dong, Bozhang (ORCID:0000000158266723)↗