Search NASA⌕ Search

Engineering topics

Eastman, J. A.

Publications and source records attributed to Eastman, J. A..

10 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

In-situ synchrotron x-ray studies of the microstructure and stability of In 2 O 3 epitaxial films

We report on the synthesis, stability, and local structure of In2O3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In2O3 deposited onto (0 0 1)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski-Krastanov growth mode at a temperature of 850 degrees C, resulting in epitaxial, truncated square pyramids with (1 1 1) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In2O3 from the magnetron source. We also find that the internal lattice structure of one such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In2O3 nanostructures and films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Understanding Artifacts in Impedance Spectroscopy

Four-terminal measurements of impedance spectra have long been troubled by the presence of high frequency artifacts that typically indicate unphysically large inductive behavior. In this paper, we follow up on the observation of Fleig et al., that voltage and current are necessarily measured in different locations of the potentiostat circuit, and that, typically, the electrometer input is a virtual ground. In this case, the capacitance of coaxial cables that connect sample electrodes to the potentiostat provides a high frequency conduction path to ground, so that some of the current that passes through the sample bypasses the electrometer. In four-electrode measurements, this mechanism produces the observed inductive artifacts. We examine a variety of simulated samples, with calculations compared to measurements of relevant circuits, to quantitatively investigate the nature of the artifacts. Model results agree with measurements when the leakage capacitances are properly included in the circuit analyses. With understanding of the origin of the inductive artifacts, the four-electrode method can be effectively utilized, enabling a combination of two-, three- and four-electrode measurements to be used to best advantage. Finally, using this combination of electrode configurations, temperature dependent measurements of SrTiO 3 , Y 2 O 3 -stabilized ZrO 2 , and In 2 O 3 films deposited on YSZ substrates are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

The A n+1 B n O 3n+1 Ruddlesden–Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of the intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden–Popper phases. Lastly, we demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La 3 Ni 2 O 7 .

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interface Development in Cu-Based Structures Transient Liquid Phase (TLP) Bonded with Thin Al Foil Intermediate Layers

Proper bonding and assembly techniques are essential for fabrication of functional metal-based microdevices. Transient liquid phase (TLP) bonding is a promising technique for making enclosed metallic microchannel devices. In this paper, we report results of TLP bonding of Cu-based structures at temperatures between 550ºC and 610ºC with thin elemental Al foils as intermediate boding layers. In-situ X-ray diffraction was utilized to examine the structure of Cu/Al interface in real time, resulting in a proposed sequence of structural evolution of the Cu/Al/Cu TLP bonding interface region. Three different types of bonding interface structures, the “γ 1 structure”, the “eutectoid structure” (“E structure”), and the “E/γ 1 /E structure”, were observed through electron microscopy, and related to the proposed sequence of interfacial structural evolution. Tensile fracture tests were conducted on TLP bonded Cu/Al/Cu coupon assemblies. Hardness of the various phases within the bonding interface region was probed with instrumented nanoindentation. Results of mechanical testing were correlated to the structure of the bonding interface region. The present results provide an understanding of the structural evolution within the Cu/Al/Cu TLP bonding interface region, and offer guidance to future bonding of Cubased microsystems.

Chen, Ke↗
DOE OSTI2014

Interfacial charge and strain effects on the ferroelectric behavior of epitaxial (001) PbTiO 3 films on (110) DyScO 3 substrates

In-situ synchrotron x-ray observations reveal that the ferroelectric behavior of epitaxial (001) PbTiO3 thin films grown on (110) DyScO3 substrates depends on both film thickness and interfacial electrical properties. A 92-nm-thick film was found to exhibit an a/c domain structure with a ferroelectric Curie temperature similar to that theoretically predicted based on the strain state. In contrast, 6-nm-thick films contained only c-oriented domains, and the ferroelectric behavior was found to depend strongly on the nature of the electrical boundary condition at the buried interface.

Highland, M. J.↗
DOE OSTI2014

Octahedral rotations in strained LaAlO{sub 3}/SrTiO{sub 3} (001) heterostructures

Many complex oxides display an array of structural instabilities often tied to altered electronic behavior. For oxide heterostructures, several different interfacial effects can dramatically change the nature of these instabilities. Here, we investigate LaAlO{sub 3}/SrTiO{sub 3} (001) heterostructures using synchrotron x-ray scattering. We find that when cooling from high temperature, LaAlO{sub 3} transforms from the Pm3{sup ¯}m to the Imma phase due to strain. Furthermore, the first 4 unit cells of the film adjacent to the substrate exhibit a gradient in rotation angle that can couple with polar displacements in films thinner than that necessary for 2D electron gas formation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Modular instrument mounting system for variable environment in operando X-ray experiments

In the growing field of in operando and in situ X-ray experiments, there exists a large disparity in the types of environments and equipment to control them. This situation makes it challenging to conduct multiple experiments with a single mechanical interface to the diffractometer. Here, we describe the design and implementation of a modular instrument mounting system that can be installed on a standard six-circle diffractometer (e.g., 5021 Huber GmbH). This new system allows for the rapid changeover of different chambers and sample heaters and permits accurate sample positioning (x, y, z, and azimuthal rotation) without rigid coupling to the chamber body. Isolation of the sample motion from the chamber enclosure is accomplished through a combination of custom rotary seals and bellows. Control of the pressure and temperature has been demonstrated in the ranges of 10{sup -6}-10{sup 3} Torr and 25 Degree-Sign C-900 Degree-Sign C, respectively. We have utilized the system with several different modular instruments. As an example, we provide in situ sputtering results, where the growth dynamics of epitaxial LaGaO{sub 3} thin films on (001) SrTiO{sub 3} substrates were investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗