Engineering topics

Eden, R. C.

Publications and source records attributed to Eden, R. C..

3 records

NASA NTRS1975

A 1.06 micrometer avalanche photodiode receiver

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

Eden, R. C.↗

NASA NTRS1975

The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.

Eden, R. C.↗

NASA NTRS1975

Heterojunction III-V alloy photodetectors for high-sensitivity 1.06-micrometers optical receivers

It is pointed out that currently promising technical developments related to the Nd-YAG laser technology at 1.06 micrometers cannot be implemented because of the absence of a suitable detector. Such a detector could possibly be provided in connection with new advances related to the development of the heterojunction III-V alloy photodiode. Details of detector requirements for the considered applications are discussed along with approaches to satisfy these requirements by an appropriate detector design.

Eden, R. C.↗