Engineering topics

Edmonds, Larry D.

Publications and source records attributed to Edmonds, Larry D..

28 records · Page 2

NASA NTRS1991

Charge collected by diffusion from an ion track under mixed boundary conditions

Charge-carrier diffusion from an ion track in a silicon substrate at least a few hundred microns thick is analyzed. The substrate upper surface is treated as reflective except for a small section, intended to represent a reverse-biased junction, which is treated as a sink. Total charge collected by the sink is calculated by assuming transport to be governed by an ambipolar diffusion equation with temporally constant and spatially uniform carrier lifetime and diffusion coefficient. Present results apply to a normally incident track but could easily be generalized to arbitrary track direction. The collected charge is found to depend on track length and on the electrostatic capacitance, rather than the area, of the sink. Theoretical predictions are compared to the results of a numerical simulation called the Poisson and Continuity Equation Solver (PISCES) for three cases and are found to agree within a factor of two in the worst case.

Edmonds, Larry D.↗

NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

A recombination mechanism that significantly reduces charge collection from very dense ion tracks in silicon devices was postulated by Zoutendyk et al. The theoretical analysis presented here concludes that Auger recombination is such a mechanism and is of marginal importance for higher density tracks produced by 270-MeV krypton, but of major importance for higher density tracks. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a non-zero limiting value as t yields infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗

NASA NTRS1990

An Ohmic model for charge transport in a semiconductor

This analysis applies to a quasi-neutral region of uniformly doped semiconductor material. The objective is to solve for the current density in terms of the carrier density and the electric potential boundary values. It is shown that the combined effects of drift and diffusion can be calculated by assuming the current density to obey Ohm's law, but with modified electric potential boundary values.

Edmonds, Larry D.↗

NASA NTRS1990

Upper-Bound Estimates Of SEU in CMOS

Theory of single-event upsets (SEU) (changes in logic state caused by energetic charged subatomic particles) in complementary metal oxide/semiconductor (CMOS) logic devices extended to provide upper-bound estimates of rates of SEU when limited experimental information available and configuration and dimensions of SEU-sensitive regions of devices unknown. Based partly on chord-length-distribution method.

Edmonds, Larry D.↗

NASA NTRS1989

Relationship Between Latchup And Transistor Current Gain

Theoretical study takes new look at current-vs.-voltage behavior of silicon controlled rectifiers (SCR's), four-layer complementary metal oxide/semiconductor (CMOS) devices, and similar devices susceptible to latchup. For purposes of analysis, "latchup" denotes transition of such device from lower-current-conducting steady state to distinct higher-current-conducting steady state. Focuses upon conventional two-couple-transistor model of one-dimensional SCR. Although model gives oversimplified view of latchup in CMOS circuits, useful for qualitative predictions of electrical characteristics.

Edmonds, Larry D.↗

NASA NTRS1989

Boundary-Value Problem For Magnetic-Cutoff Rigidities

Field equations yield overview of motions of many charged particles. Alternative approach developed for calculation of magnetic cutoff rigidities of electrically-charged particles in static magnetic field. New formulation involves partial differential field equation treated as boundary-value problem. Tracing of trajectories needed only to supply boundary conditions.

Edmonds, Larry D.↗

NASA NTRS1988

Approximations useful for the prediction of electrostatic discharges for simple electrode geometries

The report provides approximations for estimating the capacitance and the ratio of electric field strength to potential for a certain class of electrode geometries. The geometry consists of an electrode near a grounded plane, with the electrode being a surface of revolution about the perpendicular to the plane. Some examples which show the accuracy of the capacitance estimate and the accuracy of the estimate of electric field over potential can be found in the appendix. When it is possible to estimate the potential of the electrode, knowing the ratio of electric field to potential will help to determine if an electrostatic discharge is likely to occur. Knowing the capacitance will help to determine the strength of the discharge (the energy released by it) if it does occur. A brief discussion of discharge mechanisms is given. The medium between the electrode and the grounded plane may be a neutral gas, a vacuum, or an unchanged homogeneous isotropic dielectric.

Edmonds, Larry D.↗

NASA NTRS1988

Canceling Electromagnetic Interference During Tests

Old technique solves modern problem. Simple amplitude-and-phase-cancellation technique removes strong electromagnetic interference from received test signal, enabling recovery of relatively weak signal from device under test. Useful in outdoor tests of devices for electromagnetic compatibility.

Robinson, Paul A., Jr.↗

NASA NTRS1988

Approximations For Predicting Electrostatic Discharges

Report provides approximate equations for capacitances and ratios of maximum electrostatic field strengths to potentials of variously shaped electrodes in vicinity of ground planes. Maximum-field-strength/potential ratio of given electrode used in conjunction with measured or estimated potential to determine whether discharge is likely. Capacitance and potential give measure of maximum energy release and maximum damage done by discharge.

Edmonds, Larry D.↗

NASA NTRS1987

Current distribution in a three-dimensional IC analyzed by a perturbation method. Part 1: A simple steady state theory

The steady state current distribution in a three dimensional integrated circuit is presented. A device physics approach, based on a perturbation method rather than an equivalent lumped circuit approach, is used. The perturbation method allows the various currents to be expressed in terms of elementary solutions which are solutions to very simple boundary value problems. A Simple Steady State Theory is the subtitle because the most obvious limitation of the present version of the analysis is that all depletion region boundary surfaces are treated as equipotential surfaces. This may be an adequate approximation in some applications but it is an obvious weakness in the theory when applied to latched states. Examples that illustrate the use of these analytical methods are not given because they will be presented in detail in the future.

Edmonds, Larry D.↗