Engineering topics

Edwards, P. R.

Publications and source records attributed to Edwards, P. R..

6 records

DOE OSTI2019

A PL and PLE Study of High Cu Content Cu{sub 2}ZnSnSe{sub 4} Films on Mo/Glass and Solar Cells

Cu{sub 2}ZnSnSe{sub 4} (CZTSe) is amongst leading candidates for the absorber layer in sustainable solar cells. We examine CZTSe thin films with [Cu]/[Zn + Sn] of 0.99 and [Zn]/[Sn] of 1.07, deposited on Mo/glass substrates, and solar cells fabricated from these films. The bandgap (E{sub g}) of the as deposited films and solar cells was examined by photoluminescence excitation (PLE) whereas the temperature and excitation intensity dependence of photoluminescence (PL) spectra was used to examine the nature of radiative recombination. The 6 K PL spectra of CZTSe/Mo exhibit an intense broad and asymmetrical band P1 at 0.822 eV and a lower intensity band P2 at 0.93 eV. The shape of this band, high rates of blue shift with excitation intensity rise ( j-shift) j(P1) = 14 meV and j(P2) = 8 meV per decade, and red shifts of both bands with increasing temperature suggest that both bands are associated with valence band tails due to potential fluctuations caused by high populations of charged defects. The mean depth of such fluctuation γ of 24 meV was estimated from the low energy side of P1. Device processing increased E{sub g}, blue shifted P1, decreased its width, j-shift and the mean depth of potential fluctuations. These can be due to the annealing and/or can partly be related to KCN etching and the chemical effect of Cd, from CdS replacing copper at the CdS–CZTSe interface layer. Processing induced a new broad band P3 at 1.3 eV (quenching with E{sub a} = 200 meV). We attributed P3 to defects in the CdS layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2019

Excitons in PL Spectra of Cu(In,Ga)Se{sub 2} Single Crystals

A photoluminescence (PL) study of Cu(In,Ga)Se{sub 2} (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1990

Short-crack growth behaviour in various aircraft materials

The results of the first phase of an AGARD Cooperative Test Program on the behavior and growth of short fatigue cracks are reviewed. The establishment of a common test method, means of data collection/analysis and crack growth modeling in an aircraft alloy AA 2024-T3 are described. The second phase allowed testing of various materials and loading conditions. The results of this second phase are described. All materials exhibited a short-crack effect to some extent. The effect was much less evident in 4340 steel than in the other materials. For the aluminum, aluminum-lithium, and titanium alloys, short cracks grew at stress-intensity factor ranges lower, in some cases much lower, than the thresholds obtained from long crack tests. Several laboratories used the same crack growth model to analyze the growth of short cracks. Reasonable agreement was found between measured and predicted short-crack growth rates and fatigue lives.

Edwards, P. R.↗

NASA NTRS1990

An AGARD supplemental test programme on the behaviour of short cracks under constant amplitude and aircraft spectrum loading

An AGARD Supplemental Test Program on the growth of short fatigue cracks was conducted to allow testing of various materials and loading conditions that were of interest. Twenty-two participants from ten laboratories in eight countries contributed to the supplemental test program. The objective is to review the supplemental test program and to summarize the results obtained from all laboratories. The materials tested in the supplemental program were: 2024-T3 and 7075-T6 aluminum alloys, 2090-T8E41 aluminum-lithium alloy, Ti6Al4V titanium alloy, and 4340 steel. Tests on single-edge-notch-tension specimens were conducted under several constant-amplitude loading conditions and spectrum loading conditions (FALSTAFF, Inverted FALSTAFF, GAUSSIAN, TWIST, Felix, and the Fokker 100 spectra). The plastic-replica method was used to measure the growth of short cracks at the notch root. The results from the supplemental test program show good agreement among the several laboratories who measured short-crack growth rates on the aluminum-lithium alloy.

Edwards, P. R.↗

NASA NTRS1988

Short-crack growth behaviour in an aluminum alloy: An AGARD cooperative test program

An AGARD Cooperative Test Program on the growth of short fatigue cracks was conducted to define the significance of the short-crack effect, to compare test results from various laboratories, and to evaluate an existing analytical crack-growth prediction model. The initiation and growth of short fatigue cracks (5 micrometer to 2 mm) from the surface of a semi-circular notch in 2024-T3 aluminum alloy sheet material were monitored under various load histories. The cracks initiated from inclusion particle clusters or voids on the notch surface and generally grew as surface cracks. Tests were conducted under several constant-amplitude (stress ratios of -2, -1, 0, and 0.5) and spectrum (FALSTAFF and Gaussian) loading conditions at 3 stress levels each. Short crack growth was recorded using a plastic-replica technique. Over 250 edge-notched specimens were fatigue tested and nearly 950 cracks monitored by 12 participants from 9 countries. Long crack-growth rate data for cracks greater than 2 mm in length were obtained over a wide range in rates (10 to the -8 to 10 to the -1 mm/cycle) for all constant-amplitude loading conditions. Long crack-growth rate data for the FALSTAFF and Gaussian load sequences were also obtained.

Newman, J. C., Jr.↗

NASA NTRS1988

Alignment verification procedures

In alignment verification procedures each laboratory is required to align its test machines and gripping fixtures to produce a nearly uniform tensile stress field on an un-notched sheet specimen. The blank specimens (50 mm w X 305 mm l X 2.3 mm th) supplied by the coordinators were strain gauged. Strain gauge readings were taken at all gauges (n = 1 through 10). The alignment verification procedures are as follows: (1) zero all strain gauges while specimen is in a free-supported condition; (2) put strain-gauged specimen in the test machine so that specimen front face (face 1) is in contact with reference jaw (standard position of specimen), tighten grips, and at zero load measure strains on all gauges. (epsilon sub nS0 is strain at gauge n, standard position, zero load); (3) with specimen in machine and at a tensile load of 10 kN measure strains (specimen in standard position). (Strain = epsilon sub nS10); (4) remove specimen from machine. Put specimen in machine so that specimen back face (face 2) is in contact with reference jaw (reverse position of specimen), tighten grips, and at zero load measure strains on all gauges. (Strain - epsilon sub nR0); and (5) with specimen in machine and at tensile load of 10 kN measure strains (specimen in reverse position). (epsilon sub nR10 is strain at gauge n, reverse position, 10 kN load).

Edwards, P. R.↗