Engineering topics

Elabd, H.

Publications and source records attributed to Elabd, H..

5 records

NASA NTRS1985

Shortwave infrared 512 x 2 line sensor for earth resources applications

As part of the NASA remote-sensing Multispectral Linear Array Program, an edge-buttable 512 x 2 IRCCD line image sensor with 30-micron Pd2Si Schottky-barrier detectors is developed for operation with passive cooling at 120 K in the 1.1-2.5 micron short infrared band. On-chip CCD multiplexers provide one video output for each 512 detector band. The monolithic silicon line imager performance at a 4-ms optical integration time includes a signal-to-noise ratio of 241 for irradiance of 7.2 microwatts/sq cm at 1.65 microns wavelength, a 5000 dynamic range, a modulation transfer function, greater than 60 percent at the Nyquist frequency, and an 18-milliwatt imager chip total power dissipation. Blemish-free images with three percent nonuniformity under illumination and nonlinearity of 1.25 percent are obtained. A five SWIR imager hybrid focal plane was constructed, demonstrating the feasibility of arrays with only a two-detector loss at each joint.

Tower, J. R.↗

NASA NTRS1984

Visible and shortwave infrared focal planes for remote sensing instruments

The development of solid-state sensor technology for multispectral linear array (MLA) instruments is described. A buttable four-spectral-band linear-format CCD and a buttable two-spectral band linear-format short-wave IR CCD have been designed, and first samples have been demonstrated. In addition, first-sample four-band interference filters have been fabricated, and hybrid packaging technology is being developed. Based on this development work, the design and construction of focal planes for a Shuttle sortie MLA instrument have begun. This work involves a visible and near-IR focal plane with 2048 pixels x 4 spectral bands and a short-wave IR focal plane with 1024 pixels x 2 spectral bands.

Tower, J. R.↗

NASA NTRS1984

Multispectral Linear Array detector technology

The Multispectral Linear Array (MLA) program sponsored by NASA has the aim to extend space-based remote sensor capabilities. The technology development effort involves the realization of very large, all-solid-state, pushbroom focal planes. The pushbroom, staring focal planes will contain thousands of detectors with the objective to provide two orders of magnitude improvement in detector dwell time compared to present Landsat mechanically scanned systems. Attenton is given to visible and near-infrared sensor development, the shortwave infrared sensor, aspects of filter technology development, the packaging concept, and questions of system performance. First-sample, four-band interference filters have been fabricated successfully, and a hybrid packaging technology is being developed.

Tower, J. R.↗

NASA NTRS1983

High-density Schottky barrier IRCCD sensors for remote sensing applications

It is pointed out that the ambitious goals envisaged for the next generation of space-borne sensors challenge the state-of-the-art in solid-state imaging technology. Studies are being conducted with the aim to provide focal plane array technology suitable for use in future Multispectral Linear Array (MLA) earth resource instruments. An important new technology for IR-image sensors involves the use of monolithic Schottky barrier infrared charge-coupled device arrays. This technology is suitable for earth sensing applications in which moderate quantum efficiency and intermediate operating temperatures are required. This IR sensor can be fabricated by using standard integrated circuit (IC) processing techniques, and it is possible to employ commercial IC grade silicon. For this reason, it is feasible to construct Schottky barrier area and line arrays with large numbers of elements and high-density designs. A Pd2Si Schottky barrier sensor for multispectral imaging in the 1 to 3.5 micron band is under development.

Elabd, H.↗

NASA NTRS1982

High density Schottky barrier IRCCD sensors for SWIR applications at intermediate temperature

Monolithic 32 x 64 and 64 x 1:128 palladium silicide (Pd2Si) interline transfer infrared charge coupled devices (IRCCDs) sensitive in the 1 to 3.5 micron spectral band were developed. This silicon imager exhibits a low response nonuniformity of typically 0.2 to 1.6% rms, and was operated in the temperature range between 40 to 140 K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 microns, 5.6% at 1.65 microns 2.2% at 2.22 microns. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detectors is 0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate temperatures at TV frame rates. Typical dark current level measured at 120 K on the FPA is 2 nA/sq cm. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 micron bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 micron center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Elabd, H.↗