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Epp, Larry

Publications and source records attributed to Epp, Larry.

12 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same

Switches having an in situ grown carbon nanotube as an element thereof, and methods of fabricating such switches. A carbon nanotube is grown in situ in mechanical connection with a conductive substrate, such as a heavily doped silicon wafer or an SOI wafer. The carbon nanotube is electrically connected at one location to a terminal. At another location of the carbon nanotube there is situated a pull electrode that can be used to elecrostatically displace the carbon nanotube so that it selectively makes contact with either the pull electrode or with a contact electrode. Connection to the pull electrode is sufficient to operate the device as a simple switch, while connection to a contact electrode is useful to operate the device in a manner analogous to a relay. In various embodiments, the devices disclosed are useful as at least switches for various signals, multi-state memory, computational devices, and multiplexers.

Kaul, Anupama B.↗
NASA NTRS2008

Fast Electromechanical Switches Based on Carbon Nanotubes

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Kaul, Anupama↗
NASA NTRS2008

24-Way Radial Power Combiner/Divider for 31 to 36 GHz

The figure shows a prototype radial power-combining waveguide structure, capable of operation at frequencies from 31 to 36 GHz, that features an unusually large number (N = 24) of combining (input) ports. The combination of wide-band operation and large N is achieved by incorporating several enhancements over a basic radial power-combiner design. In addition, the structure can be operated as a power divider by reversing the roles of the input and output ports. In this structure, full-height waveguides at the combining ports are matched in impedance to reduced-height radial waveguides inside the combiner base. This match is effected by impedance-transforming stepped waveguide sections. This matching scheme is essential to achievement of large N because N is limited by the height of the waveguides in the base. Power is coupled from the 24 reduced- height radial waveguides into the TE01 mode of a circular waveguide in the base with the help of a matching post at the bottom of the base. ( TE signifies transverse electric, the first subscript is the azimuthal mode number, and the second subscript is the radial mode number.) More specifically, the matching post matches the reflections from the walls of the 24 reduced-height waveguides and enables the base design to exceed the bandwidth requirement. After propagating along the circular waveguide, the combined power is coupled, via a mode transducer, to a rectangular waveguide output port. The mode transducer is divided into three sections, each sized and shaped as part of an overall design to satisfy the mode-conversion and output-coupling requirements while enabling the circular waveguide to be wide enough for combining the 24 inputs over the frequency range of 31 to 36 GHz. During the design process, it was found that two different rectangular waveguide outputs could be accommodated through modification of only the first section of the mode converter, thereby enabling operation in multiple frequency ranges.

Epp, Larry↗
NASA NTRS2008

Carbon Nanotube Switches for Communication and Memory Applications

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

memory devices↗
NASA NTRS2006

Advanced Ka-Band Transceiver With Monopulse Tracking

A proposed Ka-band transmitting/ receiving system would embody a unique combination of established and semi-proven design features. The proposed system (see figure) would include a monopulse receiving feedback loop and a mirror that could be moved by piezoelectric actuators in the feedback loop to adjust the aim of the transmitted and received radio beams. Unlike in a phased-array tracking system, phase shifters (which can be complex and expensive) would not be needed in this monopulse tracking system. Moreover, the monopulse-tracking loop could be combined with other subsystems used in established subreflector and antenna designs. The final transmitter power amplifier in the proposed system would be a quasi-optical power amplifier (QOPA) -- a combination of a planar array of 25 amplifiers and corresponding planar arrays of antenna elements, such that free-space power combining would take place at the output.

Khan, Abdur↗
NASA NTRS2006

Air-bridge and Vertical CNT Switches for High Performance Switching Applications

Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, approximately 1 micrometer deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture.

nanoelectromechanical systems (NEMS) devices↗
NASA NTRS2005

Stripline/Microstrip Transition in Multilayer Circuit Board

A stripline-to-microstrip transition has been incorporated into a multilayer circuit board that supports a distributed solid-state microwave power amplifier, for the purpose of coupling the microwave signal from a buried-layer stripline to a top-layer microstrip. The design of the transition could be adapted to multilayer circuit boards in such products as cellular telephones (for connecting between circuit-board signal lines and antennas), transmitters for Earth/satellite communication systems, and computer mother boards (if processor speeds increase into the range of tens of gigahertz). The transition is designed to satisfy the following requirements in addition to the basic coupling requirement described above: (1) The transition must traverse multiple layers, including intermediate layers that contain DC circuitry. (2) The transition must work at a frequency of 32 GHz with low loss and low reflection. (3) The power delivered by the transition to top-layer microstrip must be split equally in opposite directions along the microstrip. Referring to the figure, this amounts to a requirement that when power is supplied to input port 1, equal amounts of power flow through output ports 2 and 3. (4) The signal-line via that is necessarily a part of such a transition must not be what is known in the art as a blind via; that is, it must span the entire thickness of the circuit board.

Epp, Larry↗
NASA NTRS2005

Patch Antenna Fed via Unequal-Crossed-Arm Aperture

A proposed rectangular-patch antenna for transmitting or receiving microwave circularly polarized (CP) radiation would be fed via a cross-shaped aperture that would have unequal arms and would, in turn, be fed at a single point via a microstrip transmission line. As a consequence of the unequal-arm aperture design, the antenna could be made smaller in one dimension, relative to a typical prior CP antenna that comprises a nearly square patch fed via an equal-crossed-arm aperture. Hence, in designing a phased array of such antennas, the antennas could be packed together more closely along one dimension, making it possible to scan the beam radiated by the antenna over a wider angular range in a plane that includes that dimension. Alternatively or in addition, one could lay out transmission lines in the extra spaces created by the shortening in one dimension

Epp, Larry↗
NASA NTRS2005

High-Aperture-Efficiency Horn Antenna

A horn antenna (see Figure 1) has been developed to satisfy requirements specific to its use as an essential component of a high-efficiency Ka-band amplifier: The combination of the horn antenna and an associated microstrip-patch antenna array is required to function as a spatial power divider that feeds 25 monolithic microwave integrated-circuit (MMIC) power amplifiers. The foregoing requirement translates to, among other things, a further requirement that the horn produce a uniform, vertically polarized electromagnetic field in its patches identically so that the MMICs can operate at maximum efficiency. The horn is fed from a square waveguide of 5.9436-mm-square cross section via a transition piece. The horn features cosine-tapered, dielectric-filled longitudinal corrugations in its vertical walls to create a hard boundary condition: This aspect of the horn design causes the field in the horn aperture to be substantially vertically polarized and to be nearly uniform in amplitude and phase. As used here, cosine-tapered signifies that the depth of the corrugations is a cosine function of distance along the horn. Preliminary results of finite-element simulations of performance have shown that by virtue of the cosine taper the impedance response of this horn can be expected to be better than has been achieved previously in a similar horn having linearly tapered dielectric- filled longitudinal corrugations. It is possible to create a hard boundary condition by use of a single dielectric-filled corrugation in each affected wall, but better results can be obtained with more corrugations. Simulations were performed for a one- and a three-corrugation cosine-taper design. For comparison, a simulation was also performed for a linear- taper design (see Figure 2). The three-corrugation design was chosen to minimize the cost of fabrication while still affording acceptably high performance. Future designs using more corrugations per wavelength are expected to provide better field responses and, hence, greater aperture efficiencies.

Pickens, Wesley↗
NASA NTRS2003

Engineered Carbon Nanotube Materials for High-Q Nanomechanical Resonators

This document represents a presentation offered by the Jet Propulsion Laboratory, with assistance from researchers from Brown University and Northrop Grumman. The presentation took place in Seoul, Korea in July 2003 and attempted to demonstrate the fabrication approach regarding the development of high quality factor (high-Q) mechanical oscillators (in the forms of a tunable nanotube resonator and a nanotube array radio frequency [RF] filter) aimed at signal processing and based on carbon nanotubes. The presentation also addressed parallel efforts to develop both in-plane single nanotube resonators as well as vertical array power devices.

chemical vapor depositions↗
NASA NTRS1991

Determination of a natural basis function set on thick, structured slabs using Prony's method

The calculation of currents on a thick, structured slab such as a thick slab of honeycomb is discussed. Unfortunately, for certain applications, the slab can be on the order of several wavelengths, so that the straightforward application of the method of moments using subdomain basis functions is too expensive. The authors discuss how to apply Prony's method to the currents calculated for a thin, structured slab to obtain a natural set of basis functions to represent the currents in the interior of a thick slab. Prony's method represents the currents as a series of complex exponential functions. The thick slab problem is then solved by the method of moments using subdomain basis functions near the slab interfaces and one or two of the complex exponentials as basis functions within the slab.

Jorgenson, Roy E.↗