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Erickson, G.

Publications and source records attributed to Erickson, G..

Burner Rig Hot Corrosion of Five Ni-Base Alloys Including Mar-M247

The hot corrosion resistance of four new Ni-base superalloys was compared to that of Mar-M247 by testing in a Mach 0.3 burner rig at 900 C for 300 1-hr cycles. While the Al content was held the same as in the Mar-M247, the Cr and Co levels in the four new alloys were decreased while other strengthening elements (Re, Ta) were increased. Surprisingly, despite their lower Cr and Co contents, the hot corrosion behavior of all four new alloys was superior to that of the Mar-M247 alloy. The Mar-M247 alloy began to lose weight almost immediately whereas the other four alloys appeared to undergo an incubation period of 50-150 1-hr cycles. Examination of the cross-sectional microstructures showed regions of rampant corrosion attack (propagation stage) in all five alloys after 300 1-hr cycles . This rampant corrosion morphology was similar for each of the alloys with Ni and Cr sulfides located in an inner subscale region. The morphology of the attack suggests a classic "Type I", or high temperature, hot corrosion attack.

Nesbitt, James A.↗

Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

Ackley, D. E.↗

A 128 x 128 InGaAs detector array for 1.0 - 1.7 microns

A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.

Olsen, G.↗