100 Gbps Radiation Tolerant Optical Transceiver (Final Technical Report)
The overall technical objective in phase I for the Surface Emitting Laser-Electro-Absorption Modulator (EAM) was to demonstrate feasibility of this approach by designing and building the laser-EAM chips, optimizing the fabrication process for the Laser/EAM in a series of 3 fabrication runs, irradiating Laser/EAM chips from each run and DC testing of the chips post radiation. 100 Gbps/channel testing would be done at the end of the phase II program before and after radiation. The overall technical objective for the driver circuit was to demonstrate the radiation tolerance of a circuit using the same technology as the driver, and to design the appropriate driver circuit.
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