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Evans, Laura J.

Publications and source records attributed to Evans, Laura J..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

The Effect Stacking Fault Segregation and Phase Transformations have on Creep Strength in Ni-based Superalloys

In this study, two commercially similar polycrystalline Ni-based disk superalloys (LSHR and ME3) were creep tested at 760C and 552MPa to approximately 0.3% plastic strain. LSHR consistently displayed superior creep properties at this stress/temperature regime even though the microstructural characteristics between the two alloys were comparable. High resolution structural and chemical analysis, however, revealed significant differences between the two alloys among active gamma prime shearing modes involving superlattice intrinsic and extrinsic stacking faults. In ME3, Co and Cr segregation and Ni and Al depletion were observed along the intrinsic faults - revealing a gamma prime -to- gamma phase transformation. Conversely in LSHR, an alloy with a higher W content, Co and W segregation was observed along the intrinsic faults. This observation combined with scanning transmission electron microscopy (STEM) simulations confirm a gamma prime-to-D019 phase transformation along the intrinsic faults in LSHR. Using experimental observations and density functional theory calculations, a novel local phase transformation strengthening mechanism is proposed that could be further utilized to improve the high temperature creep capabilities of Ni-base disk alloys.

Superalloy↗
NASA NTRS2016

Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

ceramic matrix composites↗
NASA NTRS2015

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

JFET↗
NASA NTRS2015

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Microelectronics↗
NASA NTRS2015

Integration of Nanostructures into Microsensor Devices on Whole Wafers

Chemical sensors are used in a wide variety of applications, such as environmental monitoring, fire detection, emission monitoring, and health monitoring. The fabrication of chemical sensors involving nanostructured materials holds the potential for the development of sensor systems with unique properties and improved performance. However, the fabrication and processing of nanostructures for sensor applications currently are limited in the ability to control their location on the sensor, which in turn hinders the progress for batch fabrication. This report discusses the advantages of using nanomaterials in sensor designs, some of the challenges encountered with the integration of nanostructures into microsensor / devices, and then briefly describes different methods attempted by other groups to address this issue. Finally, this report will describe how our approach for the controlled alignment of nanostructures onto a sensor platform was applied to demonstrate an approach for the mass production of sensors with nanostructures.

Nanostructures (Devices)↗
NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗
NASA NTRS2010

A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C

A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900 C is reported. Preliminary results revealed the following: 1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 x 10(exp 19) per cubic centimeter, with specific contact resistances rhosNd's of 7.69 x 10(exp -4) and 5.81 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after rapid thermal annealing (RTA), and 5.9 x 10(exp -3) and 2.51 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after subsequent soak at 900 C for 1 h in argon, and 2) ohmic contact on n- and p-type 6H-SiC having Nd > 2 x 10(exp 19) and Na > 1 x 10(exp 20) per cubic centimeter, with rhosNd = 5 x 10(exp -5) and rhosNa = 2 X 10(exp -4) OMEGA (raised dot) square centimeter, respectively, after RTA, and rhosNd = 2.5 x 10 (exp -5) and rhosNa = 1.5 x 10(exp -4) OMEGA (raised dot) square centimeter after subsequent treatment at 900 C for 1 h in argon, respectively.

Okojie, Robert S.↗
NASA NTRS2010

Processing Nanostructured Sensors Using Microfabrication Techniques

Standard microfabrication techniques can be implemented and scaled to help assemble nanoscale microsensors. Currently nanostructures are often deposited onto materials primarily by adding them to a solution, then applying the solution in a thin film. This results in random placement of the nanostructures with no controlled order, and no way to accurately reproduce the placement. This method changes the means by which microsensors with nanostructures are fabricated. The fundamental advantage to this approach is that it enables standard microfabrication techniques to be applied in the repeated manufacture of nanostructured sensors on a microplatform.

Hunter, Gary W.↗
NASA NTRS2009

Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

VanderWal, Randy L.↗
NASA NTRS2008

Prolonged 500 C Operation of 6H-SiC JFET Integrated Circuitry

This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 degC with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 C before failure.

Neudeck, Philip G.↗
NASA NTRS2008

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

Neudeck, Philip G.↗
NASA NTRS2008

High Temperature Electronics for Intelligent Harsh Environment Sensors

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Evans, Laura J.↗
NASA NTRS2008

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500 C in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500 C operational testing. These results establish a new technology foundation for realizing durable 500 C ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications.

Neudeck, Philip G.↗
NASA NTRS2008

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

Neudeck, Philip G.↗
NASA NTRS2007

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Evans, Laura J.↗
NASA NTRS2007

The Application of Metal Oxide Nanomaterials for Chemical Sensor Development

NASA Glenn Research Center (GRC) has been developing miniature chemical sensors for a variety of applications including fire detection, emissions monitoring, fuel leak detection, and environmental monitoring. Smart Lick and Stick sensor technology which integrates a sensor array, electronics, telemetry, and power into one microsystem are being developed. These microsystems require low power consumption for long-term aerospace applications. One approach to decreasing power consumption is the use of nanotechnology. Nanocrystalline tin oxide (SnO2) carbon monoxide (CO) sensors developed previously by this group have been successfully used for fire detection and emissions monitoring. This presentation will briefly review the overall NASA GRC chemical sensor program and discuss our further effort in nanotechnology applications. New carbon dioxide (CO2) sensing material using doped nanocrystalline SnO2 will be discussed. Nanocrystalline SnO2 coated solid electrolyte CO2 sensors and SnO2 nanorod and nanofiber hydrogen (H2) sensors operated at reduced or room temperatures will also be discussed.

Xu, Jennifer C.↗
NASA NTRS2007

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

This paper reports on initial results from the first device tested of a "second generation" Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiC webbed cantilevers, 2) has integrated heater resistor, and 3) is bonded and packaged. With proper selection of heater resistor and sensor diode biases, rapid detection of H2 down to concentrations of 20 ppm was achieved. A stable sensor current gain of 125 +/- 11 standard deviation was demonstrated during 250 hours of cyclic test exposures to 0.5% H2 and N2/air.

Neudeck, Philip G.↗