Engineering topics

Fafard, S.

Publications and source records attributed to Fafard, S..

3 records

NASA NTRS1999

Island Shape Instabilities and Surfactant-Like Effects in the Growth of InGaAs/GaAs Quantum Dots

InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.

Quantum↗

NASA NTRS1999

Ensemble Interactions in Strained Semiconductor Quantum Dot

Large variations in InGaAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs[001] substrates with different surface step densities.

quantum dots optical properties photoluminescence↗

NASA NTRS1998

Tunable Intersublevel Transitions in Self-forming Semiconductor Quantum Dots

Interfacial compositional disordering in InGaAs/GaAs quantom dots has been used to tune their intersublevel energy spaceings (delta E subscript [(i + 1) - i]).

Semiconductor Tunable Intersublevel Transitions↗