Engineering topics

Fan, John C. C.

Publications and source records attributed to Fan, John C. C..

4 records

NASA NTRS1987

GaAs/AlGaAs heterostructure point-contact concentrator cells

Point-contact cells fabricated in silicon have recently achieved very high efficiencies. Applying this structure to GaAs is difficult as it requires both surface passivation of the GaAs and a film of GaAs with thickness less than 10 microns. The authors propose to overcome these difficulties by (1) using AlGaAs layers grown by OMCVD to act as front- and back-surface fields in order to confine the photogenerated minority carriers away from the surfaces, and (2) using the CLEFT technology to produce thin, separated films of this structure. It has been found that much of the necessary technologies have been developed and that the primary problem remaining to be solved is localized junction formation.

Gale, R. P.↗

NASA NTRS1986

Theoretical temperature dependence of solar cell parameters

A simple formulation has been derived for the temperature dependence of cell parameters for any solar cell material. Detailed calculations have been performed for high-quality monocrystalline GaAs, Si and Ge cells. Preliminary experimental data for GaAs and Si cells are close to the calculated values. In general, the higher the energy gap of a material, the small is the temperature dependence of its solar cell parameters.

Fan, John C. C.↗

NASA NTRS1985

Single-cell concepts for obtaining photovoltaic conversion efficiency over 30 percent

Although solar photovoltaic conversion efficiencies over 30 percent (one sun, AM1) can be expected for multiple-cell configurations using spectral splitting techniques, the highest practical single-cell conversion efficiency that can be attained using present concepts is estimated to be about 27-28 percent. To achieve conversion efficiencies above 30 percent using single-cell configurations it will be necessary to employ different concepts, such as spectral compression and broad-band detection. The implementation of these concepts would require major breakthroughs that are not anticipated in the near future.

Fan, John C. C.↗

NASA NTRS1985

High-efficiency double-heterostructure AlGaAs/GaAs solar cells

Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.

Gale, R. P.↗