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Fang, C. R.

Publications and source records attributed to Fang, C. R..

A two dimensional analysis of sheet resistance and contact resistance effects in solar cells

A computer model is developed to study the two-dimensional nature of the sheet resistance and contact resistance effects in solar cells. A major result is the demonstration that the distributed nature of the semiconductor sheet resistance causes the terminal dark I-V characteristics to exhibit an exp(qV/2kT) type dependence even when the one-dimensional characteristics of the cell exhibit an exp(qV/kT) type voltage dependence. The analytical model which is developed provides an easy method for estimating the sheet resistance of a solar cell from the terminal I-V data.

Fang, C. R.↗

Comparison of theoretical and experimental solar cell performance

This paper presents the results of a detailed comparison between the theoretically predicted performance of silicon solar cells and the experimentally observed performance. The comparison has included the dark I-V characteristics, the spectral response characteristics and the I-V characteristics under AM0 illumination. In general it has been found that the agreement between theory and experimental behavior is very good. This good agreement has been obtained for a variety of cells fabricated with junction depths ranging from 0.1 micron to more than 1 micron and for base layer resistivities from 10 to 0.1 ohm-cm.

Fang, C. R.↗

Impurity gradients and high efficiency solar cells

One potential means of improving the efficiency of solar cells especially after space irradiation is to incorporate built-in fields into the device through the use of impurity doping gradients. A detailed numerical calculation of solar cell performance has been used to study various types of doping gradients. In general, the predicted improvements in performance have been less than previously reported due to various device effects such as, high injection and the dependence of lifetime on doping density.

Fang, C. R.↗