Activation energy and entropy of annealing kinetics.
Anomalously small annealing rate constant observed in SiE centers explained by assuming activation energy distribution
Engineering topics
Publications and source records attributed to Fang, P. H..
Anomalously small annealing rate constant observed in SiE centers explained by assuming activation energy distribution
Mathematical models for analyzing irradiation and annealing reaction kinetics
Spontaneous annealing at room temperature of electron induced defect in Li diffused oxygen- rich Si
Radiation damage and recovery of lithium-diffused silicon p-n solar cells, measuring photovoltaic parameters as function of gamma radiation fluence
Defect concentration dependence of isothermal annealing rate of electron bombardment induced radiation defects in lithium doped n-type silicon
Thermal annealing of silicon solar cells with direct solar heating or electric storage methods to avoid radiation damage
Lithium-diffuse semiconducting silicon solar cells
Relation in silicon between annealing rates, residual damage and defect concentrations, noting link to activation energy increase
Spontaneous annealing models of lithium- diffused Si solar cells, discussing defect compensation and metastable defect formation
Shear relaxation in liquids, criticizing Knollman, Miles and Hamamoto relaxation time distribution measurement method
Defects in silicon p-n solar cells with Li diffused N region produced by electron irradiation and spontaneously annealed at room temperature interpreted as Li ions
Numerical computation verifying Forte contention in connection with relaxation phenomena associated with thermoelastic dissipation in solids
Thermal annealing of proton and electron radiation damaged silicon solar cells
Cole-Cole diagram in analysis of dielectric relaxation, giving correspondence to Deybe relaxation function
Dislocation relaxation of silver and copper and asymmetry of Bordoni internal friction peak of metals
LF dielectric dispersion of nickel-zinc or manganese ferrites, discussing underlying mathematical formulations
Thermal annealing kinetics of radiation damaged silicon