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Feucht, D. L.

Publications and source records attributed to Feucht, D. L..

16 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Photovoltaic research and development status

The goals of the Photovoltaic R&D Program are to develop thin film semiconductor and novel photovoltaic conversion concepts, and to demonstrate the feasibility of producing these cells for a price of $100 - $300 per peak electric output (in 1975) by FY1985. The approaches that are used to determine which research should be funded are formal solicitations, an innovative concepts program which will be launched in FY79, and the review of unsolicited proposals.

Feucht, D. L.↗
NASA NTRS1977

Zn diffusion in Al/0.7/Ga/0.3/As compared with that in GaAs

Zinc was diffused into 4 times 10 to the 17th per cu cm n-type Al(0.7)Ga(0.3)As grown by liquid-phase epitaxy and also into n-type 2 times 10 to the 17th per cu cm doped GaAs slices at 600, 650, and 750 C. The Zn diffusion coefficient in the Al(0.7)Ga(0.3)As was about one order of magnitude larger than in GaAs. The significance of this fact is that diffusion of Zn through a 0.5 micron Al(0.7)Ga(0.3)As layer appears to be possible with adequate control of the junction depth in the underlying GaAs.

Flat, A.↗
NASA NTRS1977

Efficiency calculations for Al/x/Ga/1-x/As-GaAs heteroface solar cells

A computer-assisted analysis of the Al(x)Ga(1-x)As-GaAs heteroface solar cell is done to find the dependence of cell efficiency on substrate doping level. Assumptions for carrier lifetime needed for the evaluation of efficiency are based on measurements of experimental Al(x)Ga(1-x)As-GaAs heteroface cells. The results show the doping range 10 to the 16th-17th power per cu cm to be the best for heteroface solar cells. Calculations based on a three-halves temperature dependence for lifetimes agree well with early experimental efficiency versus temperature measurements on GaAs cells, but conflict with earlier results for an Al(x)Ga(1-x)As-GaAs heteroface cell.

Sekela, A. M.↗
NASA NTRS1977

Heterojunctions in photovoltaic devices

Heterojunctions have interesting optical properties which make them attractive for solar cells. Several types of heterostructure solar cells have been investigated: heteroface, abrupt heterojunction, and graded-gap heterojunction solar cells. The primary advantage of heterostructure cells is the enhanced short-wavelength response although there is potential for low-cost cells with polycrystalline material. The improvement in solar-cell performance for heterojunctions depends upon the selection of semiconductors with useful energy gaps that are closely matched in lattice-spacing and thermal-expansion coefficients. The importance of the heterojunction interface and its dependence on material properties is discussed. Various fabrication methods are discussed and their application to the different types of heterostructures. Recent performance data for material systems representative of each type of heterostructure cell are discussed and considered in terms of maximum expected performance.

Feucht, D. L.↗
NASA NTRS1976

Spatially non-uniform response of Al/x/Ga/1-x/As-GaAs heteroface cells

The presence of localized regions of poor current-voltage characteristic in heteroface solar cells made by liquid phase epitaxy of Al(x)Ga(1-x)As on GaAs was demonstrated by the formation of mesa diodes with better characteristics than the parent cell, and by direct observation with a flying spot scanner. The latter was also correlated with the characteristics of subsequently etched mesas. Visible features on the cells were found to be harmless or actually regions of enhanced collection in some cases, and responsible for cell performance degradation in others.

Sekela, A. M.↗
NASA NTRS1975

Studies of heteroface solar cell performance

The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are described. Crystal growth, the diffusion of Zn into the GaAs layer to form the p-n junction, SEM studies of the diffusion length of GaAs, and procedures for making ohmic contacts are discussed.

Feucht, D. L.↗