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Filikhin, I.

Publications and source records attributed to Filikhin, I..

Quantum sensing effect of electron tunneling in DQD/analyte complex

We investigate electron tunneling between quantum dots and molecules to propose a quantum sensor. This sensor consists of double quantum dots (DQD) with energy levels specifically tailored to mirror those of the target analyte. By analyzing the spectral distribution of electron localizations in the DQD system, we can delineate the analyte’s spectrum and deduce its composition by comparing it with a reference sample. To understand electron tunneling dynamics within the DQD/analyte complex, we performed three-dimensional computational modeling applying the effective potential approach to the InAs/GaAs heterostructure. In this modeling, we mimicked the analyte spectrum by utilizing a quantum well characterized by a quasi-discrete spectrum. Our calculations reveal the inherent potential of utilizing this method as a highly sensitive and selective sensor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effective mass of α-cluster in 12C nucleus

Based on the effective-mass concept, we perform the Faddeev calculations for a low-lying spectrum of 3[Formula: see text] states in [Formula: see text]C nucleus. A three-body potential is used to describe the known breaking of the 3[Formula: see text]-cluster structure in the nucleus. We show that the contribution of the three-body potential to the Hamiltonian can be compensated by increasing/decreasing the [Formula: see text]-particle free mass. The effective-mass values are adjusted to reproduce the experimental data for the [Formula: see text]C nucleus. The energy dependence of the effective mass and the correlation to a three-body potential are discussed. We show that the coupling between the [Formula: see text] ([Formula: see text]) levels forms a specific picture of anti-crossing on the energy/effective-mass plane.

Physics↗

Modeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure

We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological effective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the effect of QD-QW geometry variations. The relation to the PL experiments is shown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗