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Fischer, Saskia F.

Publications and source records attributed to Fischer, Saskia F..

7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu 2 ZnSn(S,Se) 4 kesterite thin films are found to increase from 32 to 140 cm 2 V -1 s -1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Lastly, charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

14 SOLAR ENERGY↗
DOE OSTI2016

Thermal energy and charge currents in multi-terminal nanorings

We study in experiment and theory thermal energy and charge transfer close to the quantum limit in a ballistic nanodevice, consisting of multiply connected one-dimensional electron waveguides. The fabricated device is based on an AlGaAs/GaAs heterostructure and is covered by a global top-gate to steer the thermal energy and charge transfer in the presence of a temperature gradient, which is established by a heating current. The estimate of the heat transfer by means of thermal noise measurements shows the device acting as a switch for charge and thermal energy transfer. The wave-packet simulations are based on the multi-terminal Landauer-Büttiker approach and confirm the experimental finding of a mode-dependent redistribution of the thermal energy current, if a scatterer breaks the device symmetry.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Mode-selected heat flow through a one-dimensional waveguide network

Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended one-dimensional (1D) electron waveguide network. Hot electrons are produced using a current I{sub h} in a source 2D reservoir, are transmitted through the ballistic 1D waveguide, and relax in a drain 2D reservoir. We find that the electron temperature increase, ΔT{sub e}, in the drain is proportional to the square of the heating current I{sub h}, as expected from Joule's law. No temperature increase is observed in the drain when the 1D waveguide does not transmit electrons. Therefore, we conclude that electron-phonon interaction is negligible for heat transport between 2D reservoirs at temperatures below 4.2 K. Furthermore, mode control of the 1D electron waveguide by application of a top-gate voltage reveals that ΔT{sub e} is not proportional to the number of populated subbands N, as previously observed in single 1D conductors. This can be explained with the splitting of the heat flow in the 1D waveguide network.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe) 1.15 ] m (VSe 2 ) 1 , m = 1, 2, 3, and 4

Four compounds [(SnSe)1.15]m(VSe2)1, where m = 1–4, were synthesized to explore the effect of increasing the distance between Se–V–Se dichalcogenide layers on electrical transport properties. These kinetically stable compounds were prepared using designed precursors that contained a repeating pattern of elemental layers with the nanoarchitecture of the desired product. XRD and STEM data revealed that the precursors self-assembled into the desired compounds containing a Se–V–Se dichalcogenide layer precisely separated by a SnSe layer. The 00l diffraction data are used to determine the position of the Sn, Se, and V planes along the c-axis, confirming that the average structure is similar to that observed in the STEM images, and the resulting data agrees well with results obtained from calculations based on density functional theory and a semiempirical description of van der Waals interactions. The in-plane diffraction data contains reflections that can be indexed as hk0 reflections coming from the two independent constituents. The SnSe layers diffract independently from one another and are distorted from the bulk structure to lower the surface free energy. All of the samples showed metallic-like behavior in temperature-dependent resistivity between room temperature and about 150 K. The electrical resistivity systematically increases as m increases. Below 150 K the transport data strongly indicates a charge density wave transition whose onset temperature systematically increases as m increases. This suggests increasing quasi-two-dimensional behavior as increasingly thick layers of SnSe separate the Se–V–Se layers. This is supported by electronic structure calculations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗