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Flannery, Laura

Publications and source records attributed to Flannery, Laura.

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Mechanistic origins of excitonic properties in 2D perovskites: Implications for exciton engineering

As the field of 2D halide perovskites (HPs) matures, state-of-the-art techniques to measure important properties, such as the band gap (E g ) and exciton binding energy (E b ), continue to produce inconsistent values. Here, we tackle this long-standing problem by obtaining direct measurements of E g and E b for 31 unique HP structures. The E b values are lower than in previous literature reports and lower than expected from standard theory that assumes excitons are screened by optical-frequency dielectric constants. These low E b values are shown to be a consequence of unique screening effects, such as superlattice screening and phonon screening. Here, we find a strikingly strong correlation between E b and E g and provide design principles to a priori tune E g and E b to their optimal values. As such, this work offers a blueprint for E g -E b engineering of low-dimensional semiconductors as an even more useful replacement for simply band-gap engineering.

14 SOLAR ENERGY↗
DOE OSTI2022

Establishing Self-Dopant Design Principles from Structure–Function Relationships in Self-n-Doped Perylene Diimide Organic Semiconductors

Self-doping is a particular doping method that has been applied to a wide range of organic semiconductors. However, there is a lack of understanding regarding the relationship between dopant structure and function. A structurally diverse series of self-n-doped perylene diimides (PDIs) is investigated to study the impact of steric encumbrance, counterion selection, and dopant/PDI tether distance on functional parameters such as doping, stability, morphology, and charge-carrier mobility. The studies show that self-n-doping is best enabled by the use of sterically encumbered ammoniums with short tethers and Lewis basic counterions. Additionally, water is found to inhibit doping, which concludes that thermal degradation is merely a phenomenological feature of certain dopants, and that residual solvent evaporation is the primary driver of thermally activated doping. In situ grazing-incidence wide-angle X-ray scattering studies show that sample annealing increases the π–π stacking distance and shrinks grain boundaries for improved long-range ordering. These features are then correlated to contactless carrier-mobility measurements with time-resolved microwave conductivity before and after thermal annealing. In conclusion, the collective relationships between structural features and functionality are finally used to establish explicit self-n-dopant design principles for the future design of materials with improved functionality.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Low Exciton Binding Energies and Localized Exciton–Polaron States in 2D Tin Halide Perovskites

We report aside from band gap reduction, little is understood about the effect of the tin-for-lead substitution on the fundamental optical and optoelectronic properties of metal halide perovskites (MHPs), especially when transitioning from 3D to lower dimensional structures. Herein, we take advantage of the spectro-scopic isolation of excitons in 2D MHPs to study the intrinsic differences between lead and tin MHPs. The exciton’s spectral fine structure indicates a larger polaron binding energy in tin MHPs. Additionally, the electroabsorption responses of the 2D MHPs demonstrates that tin MHPs have exciton binding energies 1.5–2× lower than that of their lead counterparts. Despite the lower binding energy, the excitons in tin MHPs are more Frenkel-like with small radii, small polarizabilities, and large dipole moments. These results are interpreted as consequences of small polaron formation and disorder-induced dipole moments. This work highlights the wide range of intrinsic differences between lead and tin MHPs as well as the complexity of excited states in these systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Voltage bias stress effects in metal halide perovskites are strongly dependent on morphology and ion migration pathways

The solar-to-power power conversion efficiencies (PCEs) of metal halide perovskites (MHP) have improved over the last decade using a wide variety of methods, including composition manipulation, dopant introduction, and interfacial buffers. These methods, however, have taken little regard for the electronic and interfacial effects such alterations may cause within devices under voltage bias stress – a condition required for most device operation. We investigate how halide and cation substitution in MHP structures [specifically, CH 3 NH 3 PbI 2.87 Cl 0.13 and Cs 0.1 (MA 0.17 FA 0.83 ) 0.9 Pb(I 0.83 Br 0.17 ) 3 ] effects the current behavior of devices while under a range of voltage bias stress in both light and dark conditions. Additionally, conducting in depth investigations into the electronic and morphological differences between these two MHP devices, we confirmed their unique voltage bias stress effects are due to intrinsic behavior within the perovskite structure. Importantly, we also determined how crystallite orientation can influence ion migration and therefore alter charge transport and current stability in MHP photovoltaic devices.

36 MATERIALS SCIENCE↗