Supercooling of thermoelectric device using a current pulse
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Engineering topics
Publications and source records attributed to Fleurial, J-P..
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The experimental techniques developed, as well as the transport properties of some of the films and filled templates, will be presented.
Many compounds with the spinel structure type have been analyzed for their thermoelectric properties. Published data was used to augment experimental results presented here to select promising thermoelectric spinels.
A new verison of a segmented thermoelectric unicouple incorporating advanced thermoelectric materials with superior thermoelectric figures of merit has been recetly proposed and is currently under development at the Jet Propulsion Laboratory (JPL).
A new version of a segmented thermoelectric unicouple incorporating advanced thermoelectric materials with superior thermoelectric figures of merit has been recently proposed and is currently being developed at the Jet Propulsion Laboratory.
To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric generator devices over large temperature gradients and also to maximize the performance of the thermoelectric materials used to build the devices.
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To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric geneteor devices over large temperature gradients and also to maximize the thermoelectric performance of the materials used to build the devices.
A low lattice thermal conductivity is one of the requirements to achieve high thermoelectric figures of merit.
Thermoelectric properties of CoP(sub 3) and CeFe(sub 4)P(sub 12) have been measured for the first time.
Several semiconducting compounds with the skutterudite structure are attractive materials for thermoelectric and electronic applications.
For the first time, large single crystals of the compound CoSb sub3 were grown from antimony rich melts by the Bridgman gradient freeze technique.
Skutterudite related phases can be derived from binary skutterudite compounds (prototype CoAs sub3) by substituting the anion or the cation atom with neighboring atoms.
The increased speeds of integrated circuits is accompanied by increased power levels and the need to package the IC chips very close together.
IrSb(sub 3) belongs to a large family of compounds with the skutterudite crystal structure (CoAs(sub 3)).