Engineering topics
Fleurial, J.-P.
Publications and source records attributed to Fleurial, J.-P..
An Update on the Skutterudite-Based Thermoelectric Technology Maturation Project for the Proposed eMMRTG
No abstract available
Investigation of the properties of electrochemically depositied semiconductor materials for thermoelectric applications
At JPL, it is our desire to fabricate thermoelectric micro-devices for power generation and cooling applications using an electrochemical deposition (ECD) technique. We believe that the performance of our current micro-device developed is limited by the properties of the ECD materials.
Solid-State Power Generating Microdevices for Distributed Space System Architectures
Deep space missions have a strong need for compact, high power density, reliable and long life electrical power generation and storage under extreme temperature conditions. Conventional power generating devices become inefficient at very low temperatures (temperatures lower than 200 K encountered during Mars missions for example) and rechargeable energy storage devices cannot be operated thereby limiting mission duration. At elevated temperatures (for example for planned solar probe or Venus lander missions), thin film interdiffusion destroys electronic devices used for generating and storing power. Solar power generation strongly depends upon the light intensity, which falls rapidly in deep interplanetary missions (beyond 5 AU), and in planetary missions in the sun shadow or in dusty environments (Mars, for example). Radioisotope thermoelectric generators (RTGs) have been successfully used for a number of deep space missions RTGs. However, their energy conversion efficiency and specific power characteristics are quite low, and this technology has been limited to relatively large systems (more than 100 W). The National Aeronautics and Space Administration (NASA) and the Jet Propulsion Laboratory (JPL) have been planning the use of much smaller spacecrafts that will incorporate a variety of microdevices and miniature vehicles such as microdetectors, microsensors, and microrovers. Except for electrochemical batteries and solar cells, there are currently no available miniaturized power sources. Novel technologies that will function reliably over a long duration mission (ten years and over), in harsh environments (temperature, pressure, and atmosphere) must be developed to enable the success of future space missions. It is also expected that such micropower sources could have a wide range of terrestrial applications, in particular when the limited lifetime and environmental limitations of batteries are key factors. Additional information is contained in the original extended abstract.
Development of Thick-Film Thermoelectric Microcoolers Using Electrochemical Deposition
Advanced thermoelectric microdevices integrated into thermal management packages and low power, electrical source systems are of interest for a variety of space and terrestrial applications. By shrinking the size of the thermoelements, or legs, of these devices, it becomes possible to handle much higher heat fluxes, as well as operate at much lower currents and higher voltages that are more compatible with electronic components. The miniaturization of state-of-the-art thermoelectric module technology based on Bi2Te3 alloys is limited due to mechanical and manufacturing constraints for both leg dimensions (100-200 gm thick minimum) and the number of legs (100-200 legs maximum). We are investigating the development of novel microdevices combining high thermal conductivity substrate materials such as diamond, thin film metallization and patterning technology, and electrochemical deposition of thick thermoelectric films. It is anticipated that thermoelectric microcoolers with thousands of thermocouples and capable of pumping more than 200 W/sq cm over a 30 to 60 K temperature difference can be fabricated. In this paper, we report on our progress in developing an electrochemical deposition process for obtaining 10-50 microns thick films of Bi2Te3 and its solid solutions. Results presented here indicate that good quality n-type Bi2Te3, n-type Bi2Te(2.95)Se(0.05) and p-type Bi(0.5)Sb(1.5)Te3 thick films can be deposited by this technique. Some details about the fabrication of the miniature thermoelements are also described.
A New High Efficiency Segmented Thermoelectric Unicouple
To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric generator devices over large temperature gradients and also to maximize the thermoelectric performance of the materials used to build the devices. However, no single thermoelectric material is suitable for use over a very wide range of temperatures (approx. 300 - 1000 K). It is therefore necessary to use different materials in each temperature range where they possess optimum performance. This can be achieved in two ways: 1) multistage thermoelectric generators where each stage operates over a fixed temperature difference and is electrically insulated but thermally in contact with the other stages and 2) segmented generators where the p- and n-legs are formed of different segments joined in series. The concept of integrating new thermoelectric materials developed at the Jet Propulsion Laboratory (JPL) into a segmented thermoelectric generator has been presented in detail in earlier publications . This new generator is expected to operate over a 300-973 K temperature difference and will use novel segmented legs based on a combination of state-of-the-art thermoelectric materials and novel p-type Zn4Sb3, p-type CeFe4Sb12-based alloys and n-type CoSb3-based alloys. An increase in the conversion efficiency of about 60% is expected compared to conventional Bi2Te3- and PbTe-based generators. We present in this paper the latest experimental results from the bonding studies between the different segments of the p-legs, n-legs, and p-leg to n-leg interconnect. Evaluation of the bond quality was done by measuring the contact resistance across the joints as well as by detailed microstructure investigations to reveal any potential interdiffusion. Among the materials investigated as inter-layers between the different segments of the legs, Pd-Ag joining alloys have been found to provide mechanically stable and low electrical resistance bonds.
Properties of Single Crystalline Semiconducting CoSb3
A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p- and n-type samples were obtained over a wide range of carrier concentration. Undoped As-grown crystals show p-type conductivity while n-type samples were obtained by addition of Te or Pd. Samples were characterized by x-ray diffractometry, electron microprobe analysis, and density measurements. The physical properties of CoSb3 such as linear thermal expansion coefficient, sound velocity, and Debye temperature were also determined and are presented. Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect measurements were performed between room temperature and about 900 K. Exceptionally high Hall mobilities were obtained on p-type samples with a maximum room-temperature Hall mobility of 3300 sq cm/V.s at a carrier concentration of 1 x 10(exp 17)/cc. The results of the transport property measurements are discussed and are in agreement with some recent predictions based on band structure calculations. The potential of CoSb3 for thermoelectric applications is evaluated.
Preparation and Thermoelectric Properties of the Skutterudite-Related Phase Ru(0.5)Pd(0.5)Sb3
A new skutterudite phase Ru(0.5)Pd(0.5)Sb3 was prepared. This new phase adds to a large number of already known materials with the skutterudite structure which have shown good potential for thermoelectric applications. Single phase, polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal-expansion coefficient, and differential thermal analysis measurements. Ru(0.5)Pd(0.5)Sb3 has a cubic lattice, space group Im3 (T(sup 5, sub h)), with a = 9.298 A and decomposes at about 920 K. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured on hot-pressed samples over a wide range of temperatures. Preliminary results show that Ru(0.5)Pd(0.5)Sb3 behaves as a heavily doped semiconductor with an estimated band gap of about 0.6 eV. The lattice thermal conductivity of Ru(0.5)Pd(0.5)Sb3 is substantially lower than that of the binary isostructural compounds CoSb3 and IrSb3. The unusually low thermal conductivity might be explained by additional hole and charge transfer phonon scattering in this material. The potential of this material for thermoelectric applications is discussed.