The effects of sub-threshold electron irradiation on surface recombination in Ge and Si.
Subthreshold electron irradiation effects on surface recombination properties of n- and p-type germanium and silicon crystals
SILICON↗
Engineering topics
Flicker, H.
Publications and source records attributed to Flicker, H..
Theoretical calculation of the direct production of divacancies in silicon.
Paired defect production rate in silicon created in single electron scattering event
CRYSTAL STRUCTURE DEFECT↗
Charged particle radiation damage in semiconductors. XII - Effects of high energy electrons in silicon and silicon solar cells Final technical report, 26 May 1965 - 26 May 1966
Electron bombardment effects on silicon and silicon solar cells
ELECTRON BOMBARDMENT↗
PROTON RADIATION DAMAGE IN SEMICONDUCTOR DEVICES
Proton radiation damage in semiconducting transistor devices - radiation hazard
RADIATION EFFECT↗
Proton Radiation Damage in Semiconductor Devices
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Gandolfo, D. A.↗