Engineering topics

Fonstad, C. G.

Publications and source records attributed to Fonstad, C. G..

4 records

NASA NTRS1983

Development of ion-implantation confined, shallow mesa stripe (Pn,Sn)Te/Pb(Te,Se) DH laser diodes

Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.

Fonstad, C. G.↗

NASA NTRS1981

Longitudinal mode behavior of PbSnTe buried heterostructure lasers

Experimental results are reported on the longitudinal mode characteristics of PbSnTe buried heterostructure laser diodes operating at 10 microns. It is found that both 'wide' (5 microns) and 'narrow' (2 microns) stripe lasers operate in a single longitudinal mode over a range up to two times the threshold, as expected on the basis of the homogeneous gain model. However, a systematic change to multimode operation is found above this pumping level, which this model cannot explain. The observed phenomenon is explained by spectral inhomogeneity with an intraband relaxation time of the order of 2 ps.

Kasemset, D.↗

NASA NTRS1980

Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range

Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.

Hsieh, H.-H.↗

NASA NTRS1980

New PbSnTe heterojunction laser diode structures with improved performance

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

Fonstad, C. G.↗