Engineering topics

Foote, M. C.

Publications and source records attributed to Foote, M. C..

31 records · Page 2

NASA NTRS1992

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Foote, M. C.↗

NASA NTRS1991

All high Tc edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

High quality YBa2Cu3O(7-x) normal-metal/YBa2Cu3O(7-x) edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective mormal metal coherence length of 20 A.

Hunt, B. D.↗

NASA NTRS1991

Chemical nature of the barrier in Pb/YBa2Cu3O(7-x) tunneling structures

Several reports of reproducible tunneling measurements on YBa2Cu3O(7-x) thin films or single crystals with a Pb counterelectrode have recently appeared. The nature of the tunnel barrier, formed by air exposure, in these structures has been unknown. In the present work, the chemical nature of the tunnel barrier is studied with X-ray photoelectron spectroscopy (XPS). Laser-ablated films grown on LaAlO3 which have been chemically etched and heated in air are found to form nonsuperconducting surface Ba species, evident in an increase of the high binding energy Ba 3d and O 1s signals. A deposited Pb film about 10 A thick is found to be oxidized, and Cu(+2) is partially reduced to Cu(+1). The tunneling barrier thus appears to consist of species resulting from a combination of the air exposure and a reaction between the superconductor and the deposited Pb counterelectrode.

Vasquez, R. P.↗

NASA NTRS1991

YBa2Cu3O(7-delta)/Au/Nb sandwich geometry SNS weak links on c-axis oriented YBa2Cu3O(7-delta)

Sandwich geometry superconductor/normal metal/superconductor structures have been fabricated on LaAlO3 and cubic zirconia with laser-ablated, c-axis-oriented YBa2Cu3O(7-delta) base electrodes, 100-600 A of Au, and Nb counter electrodes, all formed in situ without breaking vacuum. Junctions range in size from 5 to 50 micron on a side. Four probe I-V measurements at 4.2 K show RnA products as low as 6 x 10 to the -9th sq cm and critical current densities up to 5.2 kA/sq cm. AC Josephson steps were observed with the application of 10-GHz radiation. The temperature dependence of Jc and the observation of the AC Josephson effect suggest that true supercurrents are present and that they do indeed represent the characteristics of the YBa2Cu3O(7-delta)/Au/Nb structure. The best results were obtained when the devices were annealed at about 450 C in O2 for 30 min after Au deposition.

Foote, M. C.↗

NASA NTRS1991

YBa2Cu3O(7-x)/Au/Nb device structures

Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.

Hunt, B. D.↗

NASA NTRS1991

High-temperature superconducting superconductor/normal metal/superconducting devices

We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.

Foote, M. C.↗

NASA NTRS1990

Wet chemical passivation of YBa2Cu3O(7-x)

Wet chemical techniques are described for treatment of YBa2Cu3O(7-x) surfaces, which result in the formation of native compounds known to have little or no reactivity to water. Suitable native compounds include CuI, BaSO4, CuS, Cu2S, YF3, and the oxalates. Formation of surface layers in which these nonreactive native compounds are major constituents is verified with X-ray photoelectron spectroscopy (XPS) measurements on YBa2Cu3O(7-x) films treated with dilute solutions of HI, H2SO4, Na2S, HF, or H2C2O4. No significant changes are observed in the XPS spectra when the sulfide, sulfate, or oxalate films are dipped in water, while the iodide and fluoride films show evidence of reaction with water. X-ray diffraction measurements show that the superconducting phase is absent in the sulfide film, but is unaffected by the oxalate and sulfate treatments.

Vasquez, R. P.↗

NASA NTRS1990

Electrical characterization of chemically modified YBa2Cu3O(7-x) surfaces

Results on electrical characterization of YBa2Cu3O(7-x) thin-film surfaces treated with a Br/ethanol chemical etch are presented. Electrical measurements of YBa2Cu3O(7-x)/Au/Nb device structures fabricated using polycrystalline, post-annelaed YBa2Cu3O(7-x) films with Br-etched surfaces, show improvements of approximately one or two orders of magnitude in current densities and resistivities (resistance-area products) relative to unetched devices. The existence of supercurrents in these structures has been confirmed by observation of the ac Josephson effect, and by magnetic field and temperature studies of the critical currents. The Br-etch process has produced 10 x 10 sq micron devices with critical current densities greater than 400 A/sq cm and resistivities as low as 4 x 10 to the -7th ohm/sq cm.

Hunt, B. D.↗

NASA NTRS1989

Reaction of nonaqueous halogen solutions with YBa2Cu3O(7-x)

The reaction of the surfaces of the new high-temperature superconductor YBa2Cu3O(7-x) with nonaqueous halogen solutions is investigated, and the species formed in the reactions are identified. Treatment of films with HF/EtOH (EtOH = HI in absolute ethanol) results in the formation of an oxyfluoride with Y:Ba:Cu relative concentrations of 1:4:3. Results of X-ray photoelectron spectroscopy of HF-treated films are consistent with the formation of CuF, a compound which does not exist in bulk form. Treatment of films with HCl/EtOH results primarily in the formation of BaCl2, with smaller amounts of YCl3, CuCl, and CuCl2. Treatment with Br2/EtOH or HBr/EtOH results in the formation of YBr3, BaBr2, and CuBr with relative concentrations of 1:4:3.

Vasquez, R. P.↗

NASA NTRS1989

Wet chemical techniques for passivation of YBa2Cu3O7(7-x)

Wet chemical techniques are described for treatment of YBa2Cu3O(7-x) surfaces, resulting in the formation of native compounds with little or no reactivity to water. Promising native compounds include CuI, BaSO4, CuS, Cu2S, and the oxalates, all of which are either insoluble or have very low solubility in water. Treatment with dilute HI results in the formation of a native iodide film which is 80-90 percent CuI with small amounts of YI3 and BaI2. Treatment with dilute H2SO4 results in the formation of a film which is 95 percent BaSO4 and 5 percent Y2(SO4)3. Cu2S is formed on the surface with a dilute Na2S solution. An oxalate film with equal amounts of Y2(C2O4)3 and BaC2O4 results from treatment with dilute oxalic acid. X-ray photoelectron spectra show no significant changes when the sulfide, sulfate, or oxalate films are dipped in water, while the iodide film shows evidence of Cu(OH)2 formation.

Vasquez, R. P.↗

NASA NTRS1989

Reduced reactivity to air on HF-treated YBa2Cu3O(7-x)surfaces

Treatment of YBa2Cu3O(7-x) films with a nonaqueous solution of HF in absolute ethanol results in the formation of an oxyfluoride with relative Y:Ba:Cu concentrations of 1:4:3 on the surface, as determined by X-ray photoelectron spectroscopy. The passivation properties of chemically treated films were tested by monitoring the growth of the high binding energy O 1s peak, associated with nonsuperconducting surface species, as a function of air exposure time, for both HF-treated and untreated films. The native oxyfluoride is shown to reduce the reactivity of the superconductor to air.

Vasquez, R. P.↗

NASA NTRS1989

Nonaqueous chemical depth profiling of YBa2Cu3O(7-x)

A nonaqueous solution of Br in absolute ethanol (EtOH) has recently been reported to be effective at removing nonsuperconducting surface species from YBa2Cu3O(7-x) films, leaving the surface close to the ideal stoichiometry. This same etchant is shown here to be an effective bulk etchant in chemical depth profiling through 1-micron-thick films. The Cu remains in the 2 + oxidation state and the stoichiometry, as determined by X-ray photoelectron spectroscopy, is close to ideal and nearly constant throughout the profile, indicating the absence of any large preferential etching effects. The reaction of YBa2Cu3O(7-x) films with HF/EtOH, HCl/EtOH, and I/EtOH solutions is also reported.

Vasquez, R. P.↗

NASA NTRS1988

Nonaqueous chemical etch for YBa2Cu3O(7-x)

A nonaqueous chemical etch, with Br as the active ingredient, is described which removes the insulating hydroxides and carbonates that form on high-temperature superconductor surfaces as a result of atmospheric exposure. X-ray photoemission spectra have been recorded before and after etching YBa2Cu3O(7-x) films. It is found that, after the etch, the high binding energy O 1s and Ba 3d peaks associated with surface contaminants are greatly reduced, the Y:Ba:Cu ratio is close to the expected 1:2:3, and the oxidation state of the Cu(2+) is not affected. The resistance of an etched film reaches zero at 78 K, compared to 81 K for a similar unetched film. The suitability of other nonaqueous halogen-based etches is discussed, as is the applicability of this etch to other high-Tc superconductors.

Vasquez, R. P.↗