Engineering topics

Forrest, Stephen R.

Publications and source records attributed to Forrest, Stephen R..

5 records

DOE OSTI2024

Color‐Stable, All‐Phosphorescent White Organic Light Emitting Diodes Using the Polariton‐Enhanced Purcell Effect

Abstract The short operational lifetimes of high efficiency phosphorescent organic blue light emitting devices (PHOLEDs) has limited their use in displays and lighting. Previously, this problem has been avoided by using less efficient fluorescent blue devices in separately biased red, green, and blue emissive elements to achieve stable full color emission. However, the operational lifetime of blue phosphorescent OLEDs has been significantly improved through the utilization of the plasmon‐exciton‐polariton‐enhanced (PEP) Purcell effect. Here, a white emitting PHOLED comprising stacked red, green, and blue elements is demonstrated that exploits PEPs to extend the operational lifetime of the blue element such that all emissive layers degrade at the same rate. The device features white light emission with an external quantum efficiency of 19.1 ± 0.4%, luminous power efficiency of 13.3 ± 0.3 lm W −1 at a luminance of 1000 cd m −2 when measured over 4π solid angle, with a color rendering index of 76 unchanged throughout the device aging to 70% of its initial luminance, T 70 . A 2.9 times enhancement in the operational lifetime of the Purcell‐enhanced device is achieved to yield T 70 = 2900 ± 100 h for an initial luminance of 1000 cd m −2 , compared to devices lacking this enhancement with T 70 = 1000 ± 100 h.

36 MATERIALS SCIENCE↗

DOE OSTI2024

OLED with hybrid emissive layer

A hybrid emissive layer and OLED incorporating the same are provided. The hybrid emissive layer includes a first material having a triplet state energy level T1 H and a singlet state energy level S1 H , a second material having a triplet state energy level T1 F and a singlet state energy level S1 F ; and a third material having a triplet state energy level T1 P and a single state energy level S1 P , where T1 F $\geqslant$ T1 H ; S1 F $\leqslant$ S1 H ; and T1 P < T1 H

Thompson, Mark E.↗

DOE OSTI2024

Excitonic Shockley-Read-Hall recombination in organic semiconductors

Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombination rate in organic materials, although without a clear understanding of how its parameters relate to the underlying material properties or how it should be modified to account for the finite lifetime of exciton intermediates in, for example, the doped emissive layer of an organic light-emitting diode (OLED). Here, we formalize SRH recombination for organic semiconductors based on diffusive trapping and Langevin recombination. We show that including the exciton state suppresses the recombination rate in host-guest systems with type II energy level alignment whenever the interfacial gap between the host and guest molecular orbitals is comparable to the exciton energy. Furthermore, these results quantify the balance between bimolecular and trap-mediated recombination in doped OLED emissive layers, and indicate that devices with type II host-guest pairings can, in principle, beat the thermodynamic limit of their neat guest counterparts.

36 MATERIALS SCIENCE↗

NASA NTRS1996

Method of fabricating multiwavelength infrared focal plane array detector

A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y.ltoreq.1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

Forrest, Stephen R.↗

NASA NTRS1995

Multiwavelength infrared focal plane array detector

A multiwavelength focal plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y<1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

Forrest, Stephen R.↗