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Fossum, Eric R.

Publications and source records attributed to Fossum, Eric R..

At least 19 records

Ultrafast radiographic imaging and tracking: An overview of instruments, methods, data, and applications

Ultrafast radiographic imaging and tracking (U-RadIT) use state-of-the-art ionizing particle and light sources to experimentally study sub-nanosecond transients or dynamic processes in physics, chemistry, biology, geology, materials science and other fields. These processes are fundamental to modern technologies and applications, such as nuclear fusion energy, advanced manufacturing, communication, and green transportation, which often involve one mole or more atoms and elementary particles, and thus are challenging to compute by using the first principles of quantum physics or other forward models. One of the central problems in U-RadIT is to optimize information yield through, e.g. high-luminosity X-ray and particle sources, efficient imaging and tracking detectors, novel methods to collect data, and large-bandwidth online and offline data processing, regulated by the underlying physics, statistics, and computing power. We review and highlight recent progress in: (a.) Detectors such as high-speed complementary metal-oxide semiconductor (CMOS) cameras, hybrid pixelated array detectors integrated with Timepix4 and other application-specific integrated circuits (ASICs), and digital photon detectors; (b.) U-RadIT modalities such as dynamic phase contrast imaging, dynamic diffractive imaging, and four-dimensional (4D) particle tracking; (c.) U-RadIT data and algorithms such as neural networks and machine learning, and (d.) Applications in ultrafast dynamic material science using XFELs, synchrotrons and laser-driven sources. Hardware-centric approaches to U-RadIT optimization are constrained by detector material properties, low signal-to-noise ratio, high cost and long development cycles of critical hardware components such as ASICs. Interpretation of experimental data, including comparisons with forward models, is frequently hindered by sparse measurements, model and measurement uncertainties, and noise. Alternatively, U-RadIT make increasing use of data science and machine learning algorithms, including experimental implementations of compressed sensing. Machine learning and artificial intelligence approaches, refined by physics and materials information, may also contribute significantly to data interpretation, uncertainty quantification and U-RadIT optimization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography

We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus ‘super-resolution’). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path towards ultrafast high-resolution multi-modal radiographic imaging and tomography applications.

47 OTHER INSTRUMENTATION↗

Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography

We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus $super$-$resolution$). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path towards ultrafast high-resolution multi-modal radiographic imaging and tomography applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer

Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.

47 OTHER INSTRUMENTATION↗

Monte Carlo Modeling and Design of Photon Energy Attenuation Layers for >10× Quantum Yield Enhancement in Si-Based Hard X-ray Detectors

High-energy (>20 keV) X-ray photon detection at high quantum yield, high spatial resolution, and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10 keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuation layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to ≤10 keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that a 10–30× increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.

47 OTHER INSTRUMENTATION↗

Billion-pixel x-ray camera (BiPC-X)

The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 μm) enable billion-pixel x-ray cameras (BiPC-X) based on commercial complementary metal–oxide–semiconductor (CMOS) imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy x rays (<10 keV) and indirect detection of higher energies using scintillators. Modified Birks’s law is proposed for light yield non-proportionality in scintillators as a function of x-ray energy. Single x-ray sensitivity and spatial resolution have been validated experimentally using a laboratory x-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view or large x-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, x-ray free electron laser, and pulsed power facilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

CMOS active pixel sensor type imaging system on a chip

A single chip camera which includes an .[.intergrated.]. .Iadd.integrated .Iaddend.image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the .[.intergrated.]. .Iadd.integrated .Iaddend.structure reduces the noise that is picked up during imaging.

Fossum, Eric R.↗

Image sensor with high dynamic range linear output

Designs and operational methods to increase the dynamic range of image sensors and APS devices in particular by achieving more than one integration times for each pixel thereof. An APS system with more than one column-parallel signal chains for readout are described for maintaining a high frame rate in readout. Each active pixel is sampled for multiple times during a single frame readout, thus resulting in multiple integration times. The operation methods can also be used to obtain multiple integration times for each pixel with an APS design having a single column-parallel signal chain for readout. Furthermore, analog-to-digital conversion of high speed and high resolution can be implemented.

Yadid-Pecht, Orly↗

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Fossum, Eric R.↗

Integrated sensor with frame memory and programmable resolution for light adaptive imaging

An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

Zhou, Zhimin↗

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

Single chip camera active pixel sensor

A totally digital single chip camera includes communications to operate most of its structure in serial communication mode. The digital single chip camera include a D/A converter for converting an input digital word into an analog reference signal. The chip includes all of the necessary circuitry for operating the chip using a single pin.

Shaw, Timothy↗

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗