Search NASA⌕ Search

Engineering topics

Francis, Matt

Publications and source records attributed to Francis, Matt.

7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric Vehicles (PHEVs)

A high power (6 kW), efficient (> 95%), ultra-power dense (5.0 kW/L and 3.8 kW/kg), Level 2 isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices for application in electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs) was developed. The heart of the charger is a high-frequency capable (> 1 MHz) multi-chip power module allowing for high junction temperature (> 200 °C) operation which, when coupled with a high switching frequency, allows for an order of magnitude increase in power density, while boasting an increase in system efficiency over currently used technologies.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2014

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

Ericson, N↗
DOE OSTI2014

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan↗
DOE OSTI2014

High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.

Whitaker, Mr. Bret↗