Engineering topics

Fregoso, Benjamin M.

Publications and source records attributed to Fregoso, Benjamin M..

5 records

DOE OSTI2023

Pure spin current injection of single-layer monochalcogenides

We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling. The velocity of the electron's spins is calculated as a function of incoming photon energy and angle of linearly polarized light within a full electronic band structure scheme using density functional theory. We find peak speeds of 520, 360, 270 and 370 Km s -1 for SnS, SnSe, GeS and GeSe, respectively which are an order of magnitude larger than those found in bulk semiconductors, e.g., GaAs and CdSe. Interestingly, the spin velocity is almost independent of the direction of polarization of light in a range of photon energies. Our results demonstrate that single-layer SnS, SnSe, GeS and GeSe are candidates to produce on demand spin-current in spintronics applications.

2D-monochalcogenides↗

DOE OSTI2022

Bulk photospin effect: Calculation of electric spin susceptibility to second order in an electric field

Here, we compute the electric spin susceptibility of Bloch electrons with spin-orbit coupling to second order. We find that it is possible to generate a nonequilibrium spin polarization in the bulk of nonmagnetic inversion-symmetric materials using linearly polarized electric fields, but the process depends on interband coherence and produces heating. It may be possible to avoid heating with circular polarization in certain scenarios. The standard Edelstein effect and spin orientation effects are recovered in appropriate limits within the formalism. Finally, the electric spin susceptibility of metals has contributions proportional to spin multipole moments of the Fermi sea that dominate the low frequency spin response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Ultrafast relaxation of acoustic and optical phonons in a topological nodal-line semimetal ZrSiS

Recently, nodal line semimetals based on ZrSiS-family have garnered massive research interests contributing numerous experimental and theoretical works. Despite being the most studied nodal-line semimetal, a clear understanding of the transient state relaxation dynamics and the underlying mechanism in ZrSiS is lacking. Using time- and angle-resolved photoemission spectroscopy, we study the ultrafast relaxation dynamics in ZrSiS and reveal a unique relaxation in the bulk nodal-line state which is well-captured by a simple model based on optical and acoustic phonon cooling. Our model predicts linear decay processes for both optical and acoustic phonon relaxations with optical cooling dominant at higher temperatures. Our results reveal different decay mechanisms for the bulk and surface states and pave a way to understand the mechanism of conduction in this material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Energy relaxation dynamics in a nodal-line semimetal

Here we study the temperature relaxation dynamics of nodal-line semimetals after a sudden excitation in the presence of acoustic and optical phonon modes. We find that the nodal line constrains the electron momenta in scattering processes, and as a result, the temperature relaxation due to acoustic phonons is exponential as a function of time. However, depending on initial conditions, other functional forms are possible. In typical pump-probe experiments, the temperature relaxation is linear due to acoustic phonons with rates that vary as ~n 1/2 with density. The temperature relaxation due to optical phonons is also linear with rates ~n -1/2 or ~n .

36 MATERIALS SCIENCE↗

DOE OSTI2021

Colloquium : Physical properties of group-IV monochalcogenide monolayers

The state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers is surveyed. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally driven two-dimensional structural transformations. Additionally, these 2D materials display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry (such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies) is provided as well. Here, the physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in nonvolatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D material toolbox.

2D ferroelectrics↗