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Friedman, Daniel (ORCID:0000000239678746)

Publications and source records attributed to Friedman, Daniel (ORCID:0000000239678746).

Photovoltaics Research at NREL

General overview of NREL research, including scaling to terawatt PV, reliability testing, DuraMAT, perovskites, silicon PV, CdTe, III-V, and tandems.

CdTe↗

Selection and Use Considerations for Laser Power Photovoltaic Receivers

III-V PV receivers provide high performance over wide range of application conditions. Operating conditions including irradiance and cell temperature must be accounted for. Very high efficiencies demonstrated for small GaAs devices. Potential for significant future advances in performance, especially for other wavelengths and for cost.

GaAs↗

Distribution of the Spectral Response of Cells in Silicon Modules - Mechanisms and Implications

Measurements of the spectral response of cells in a PV module can provide important insight into the physics of the device and are also needed for the accurate calibration of the performance of these devices using solar simulators. While techniques for measuring the spectral response of PV cells are well established, measurement of the spectral response of all cells in a module is not straightforward since in this case one has electrical access to a string of cells and not to cells individually. Here we present a new approach for testing the spectral response of individual cells in silicon modules that allows for the fast mapping of the response at different locations of the module. We show that in some cases the spectral response of different cells in a module can vary considerably and propose an underlying mechanism for this variation. We also discuss the implications of this observation for the uncertainty of the spectral correction and of the I SC calibration using a solar simulator.

modules↗

Comparative Studies of Optoelectrical Properties of Prominent PV Materials: Halide Perovskite, CdTe, and GaAs

We compare three representative high performance PV materials: halide perovskite MAPbI3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier diffusion, and surface recombination and passivation, over multiple orders of photo-excitation density or carrier density appropriate for different applications. An analytic model is used to describe the excitation density dependence of PL intensity and extract the internal PL efficiency and multiple pertinent recombination parameters. A PL imaging technique is used to obtain carrier diffusion length without using a PL quencher, thus, free of unintended influence beyond pure diffusion. Our results show that perovskite samples tend to exhibit lower Shockley-Read-Hall (SRH) recombination rate in both bulk and surface, thus higher PL efficiency than the inorganic counterparts, particularly under low excitation density, even with no or preliminary surface passivation. PL lineshape and diffusion analysis indicate that there is considerable structural disordering in the perovskite materials, and thus photo-generated carriers are not in global thermal equilibrium, which in turn suppresses the nonradiative recombination. This study suggests that relatively low point-defect density, less detrimental surface recombination, and moderate structural disordering contribute to the high PV efficiency in the perovskite. This comparative photovoltaics study provides more insights into the fundamental material science and the search for optimal device designs by learning from different technologies.

14 SOLAR ENERGY↗