Engineering topics

Frye, C. D.

Publications and source records attributed to Frye, C. D..

5 records

DOE OSTI2022

Beta Radiation Hardness of GYGAG(Ce) Transparent Ceramic Scintillators

GYGAG(Ce) transparent ceramic garnet scintillators were irradiated with electrons from 0.5 to 2 MeV with fluences from 10 16 e – /cm 2 to 10 19 e – /cm 2 , corresponding to doses from 0.3 to 310 Gigarad. Absorption spectra were measured before and after irradiations. Light yields from alpha, beta, and gamma excitations were measured before and after irradiation and compared to preirradiation values to gain a deeper understanding of how electron irradiations can affect light yield, as well as defects generated in both the surface and bulk. Within experimental error, no degradation in light yield was observed for the electron-irradiated samples, as measured via beta or gamma excitation, with minimal degradation observed via alpha excitation. A small increase in optical absorption near the wavelength of emission was observed following the largest dose irradiation. These results suggest that GYGAG(Ce) is radiation hard to electron irradiation up to 10 19 e – /cm 2 and doses up to 310 Gigarad. Furthermore, this robustness to irradiation indicates that transparent ceramic garnets may prove useful for applications such as scintillation-based nuclear batteries by allowing for higher energy beta emitters, increased power densities, and enabling long service lifetimes.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report)

The goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-of- the-art devices.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2021

High temperature isotropic and anisotropic etching of silicon carbide using forming gas

Plasma-etched micropillars in 4H-SiC were etched in forming gas (4% H2, 96% N2) at 1500, 1550, and 1600 °C at 2.4 and 9.4 standard liters per min (slm). At 2.4 slm, oxygen from the aluminum oxide components of the tube furnace oxidized the SiC surface, and the pillars etched isotropically. Additionally, at 9.4 slm, the pillars etched crystallographically at 1500 and 1550 °C, and sharp 4H-SiC needless with tips as narrow as 15 nm were produced. The lateral etch rates of both 4H- and 6H-SiC were measured with the a-plane etching faster than the m-plane at 1500 and 1550 °C. At 1600 °C, the m-plane and a-plane etch at comparable rates. Due to the difference in etch rates between the m-plane and a-plane, convex surfaces tend to produce facets parallel to the a-plane, while concave surfaces produce facets parallel to the m-plane.

42 ENGINEERING↗

DOE OSTI2020

α Irradiation Response on the Electronic Transport Properties of p -B 12 P 2

B 12 P 2 , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron microscopy. However, the effect of irradiation on the electronic transport properties of B 12 P 2 has not been studied. We report electrical transport measurements on B 12 P 2 after α irradiation. The temperature-dependent Hall effect was measured on p-type B 12 P 2 after successive α irradiation from 210 Po over a fluence range of 1 × 10 11 –1 × 10 13 α/cm 2 to test for self-healing of B 12 P 2 to α bombardment. Prior to irradiation, B 12 P 2 displayed electrical transport characteristics of both hopping and impurity/defect band conduction due to background impurities and growth-induced defects. Fluences of 5 × 10 12 α/cm 2 or greater caused a decrease in the hole mobility and an increase in defect band conduction, suggesting defect accumulation in B 12 P 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2018

Selenium-iodide: A low melting point eutectic semiconductor

Inorganic liquid semiconductors are of interest in harsh radiological environments, flexible electronics, and for direct printing of semiconductor devices. Many elemental and compound liquid semiconductors exist, although the lowest melting point is observed for Se at 221 °C. Recently, reports of liquid Se-S systems have shown betavoltaic and alphavoltaic power generation as a liquid with a reduced melting point of 105 °C. Here in this paper, we show the ability to depress the melting point to 57 °C by using equal atomic fractions of selenium and iodine while maintaining semiconducting behavior. A heterojunction structure using ITO and n-GaN as the contacts was selected based on chemical compatibility and predicted band lineups. Electrical and optical measurements were used to deduce the electronic and transport properties of the mixture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗