Engineering topics
Fung, Andy
Publications and source records attributed to Fung, Andy.
Development of Gallium Nitride Monolithic Microwave Integrated Circuits for Ka-Band Remote Sensing
We have been developing gallium nitride (GaN)monolithic microwave integrated circuits (MMICs) towards thegoal of implementing a single chip transceiver frontend forcloud radar arrays at Ka-band. We present our first iterationdesign, fabrication and test cycle implementation of GaN poweramplifiers (PAs), low noise amplifiers (LNAs), driver amplifier,single-pole- double and triple throw switches, and voltagecontrolled attenuator. These components are necessary forimplementing a transceiver unit cell concept with digitalcalibration capabilities to enable scalable array sizes for radarand radiometry.
Traveling-wave parametric amplifiers for microwave and millimeter-wave radiometers
No abstract provided
X- to Ka- Band Cryogenic LNA Module for Very Long Baseline Interferometry
We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz with low noise temperature performance of 10 - 18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5-35 GHz.
A W-Band Spatial Power-Combining Amplifier using GaN MMICs
In this paper, we describe a miniature powercombiner for monolithic millimetre-wave integrated circuit (MMIC) chips using spatial power-combining with cavity modes. We have designed GaN MMIC power amplifier chips for 94 GHz, and illustrate the concept of the W-Band Spatial Power Combining Amplifier (WSPCA). Using 1 Watt, 94 GHz MMIC chips in a two-way cavity mode combiner, we were able to achieve 2 Watts of output power with 9 dB gain and 15 % PAE. This technique could be extended to high power MMICs and larger numbers of chips to achieve higher output power in a compact size. The applications include earth science radar, but may be extended to other applications requiring wider bandwidth.
Cryogenic Low Noise MMIC Amplifiers for U-Band (40-60 GHz)
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40-60 GHz). The LNAs were fabricated in NGC’s 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40-60 GHz range. We achieved a noise temperature less than 30 K over the 40-60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50-60 GHz range.
Miniature Packaging Concept for LNAs in the 200-300 GHz Range
In this work, we describe new miniaturized low noise amplifier modules which we developed for incorporation in small-scale satellites or Cubesats, and which exhibit similar or better performance compared to previously reported LNAs in the literature. We have targeted the WR4 (170-260 GHz) and WR3 (220-325 GHz) waveguide bands for the module development. The modules include two different methods of E-plane probes which have been developed for low loss, and stability at high frequencies. MMIC LNAs were also developed for these frequency ranges and fabricated in Northrop Grumman Corporation's 35 nm InP HEMT technology, and we have experimentally verified that noise performance is lower than reported in prior work. The best results include a miniature LNA module with 550K noise at 224 GHz, and a wideband LNA module with 15 dB gain from 230-280 GHz.
A Cross-Track Cloud-Scanning Dual-Frequency Doppler (C2D2) Radar for the Proposed ACE Mission and Beyond
The National Resource Council’s Earth Science Decadal Survey” (NRCDS) has identified the Aerosol/Climate/Ecosystems (ACE) Mission as a priority mission for NASA Earth science. The NRC recommended the inclusion of "a cross-track scanning cloud radar with channels at 94 GHz and possibly 34 GHz for measurement of cloud droplet size, glaciation height, and cloud height". Several radar concepts have been proposed that meet some of the requirements of the proposed ACE mission but none have provided scanning capability at both 34 and 94 GHz due to the challenge of constructing scanning antennas at 94 GHz. In this paper, we will describe a radar design that leverages new developments in microwave monolithic integrated circuits (MMICs) and micro-machining to enable an electronically-scanned radar with both Ka-band (35 GHz) and W-band (94-GHz) channels. This system uses a dual-frequency linear active electronically-steered array (AESA) combined with a parabolic cylindrical reflector. This configuration provides a large aperture (3m x 5m) with electronic-steering but is much simpler than a two-dimension AESA of similar size. Still, the W-band frequency requires element spacing of approximately 2.5 mm, presenting significant challenges for signal routing and incorporation of MMICs. By combining (Gallium Nitride) GaN MMIC technology with micro-machined radiators and interconnects and silicon-germanium (SiGe) beamforming MMICs, we are able to meet all the performance and packaging requirements of the linear array feed and enable simultaneous scanning of Ka-band and W-band radars over swath of up to 100 km.
A 75-116-Ghz LNA with 23-K Noise Temperature at 108 Ghz
In this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically cooled to 27 K. The measured gain is 22 to 27 dB for frequency range of 75 to 116 GHz. Furthermore, the amplifier utilizes four finger devices with total gate width of 60 um resulting for improved linearity.
324GHz CMOS VCO Using Linear Superimposition Technique
Terahertz (frequencies ranged from 300GHz to 3THz) imaging and spectroscopic systems have drawn increasing attention recently due to their unique capabilities in detecting and possibly analyzing concealed objects. The generation of terahertz signals is nonetheless nontrivial and traditionally accomplished by using either free-electron radiation, optical lasers, Gunn diodes or fundamental oscillation by using III-V based HBT/HEMT technology[1-3]... We have substantially extended the operation range of deep-scaled CMOS by using a linear superimposition method, in which we have realized a 324GHz VCO in 90nm digital CMOS with 4GHz tuning range under 1V supply voltage. This may also pave the way for ultra-high data rate wireless communications beyond that of IEEE 802.15.3c and reach data rates comparable to that of fiber optical communications, such as OC768 (40Gbps) and beyond.
Indium phosphide dobule heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200GHz
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T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications
We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.
Nanoklystron: A Monolithic Tube Approach to THz Power Generation
The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.