Engineering topics

Gamero-Castaño, Manuel

Publications and source records attributed to Gamero-Castaño, Manuel.

4 records

NASA NTRS2020

Progress on LISA Colloid Microthruster Technology Development

Colloid microthrusters have been operated successfully in flight, providing drag-free and precision control for spacecraft that can be used for future applications such as gravity wave and exoplanet observatories. The Space Technology 7 Disturbance Reduction System (ST7- DRS) technology demonstration payload included eight Busek Colloid Micro-Newton Thrusters (CMNTs) as part of the Laser Interferometer Space Antenna (LISA) Pathfinder mission that launched in December of 2015. The CMNTs provided full attitude and precision drag-free control of the spacecraft with <10 nm/√Hz stability along the most sensitive axis during commissioning, nominal, and extended mission phases through April of 2017. Performance requirements (≤0.1 μN/√Hz) were met and models were validated based on on- orbit measurements of test mass motion and actuation during the 60-day nominal and 30-day extended missions. In 2018, the European Space Agency (ESA) selected LISA to be the agency’s next “large-class” mission, currently in Phase A, with a launch scheduled for 2034 and a 12.5-year duration, including the transfer (1.5 years), commissioning (1 year), nominal (4 or 6 years), and extended (6 or 4 years) phases of the mission, which sets the lifetime and consumables requirement. NASA is considering a significant contribution of hardware to the ESA-led mission, potentially including colloid microthrusters. In preparation, NASA is developing five technologies to TRL 5 and 6, including the colloid microthrusters, to be ready for infusion into LISA by the mission adoption review (MAR), currently scheduled for 2024. While ST7-DRS effectively brought the CMNTs to TRL 7, additional lower-TRL flow control components must be developed for full redundancy, reducing the system-level TRL back to 4. Key to the future of the colloid microthruster technology will be to use lessons learned and keep as much of the heritage from the ST7 design as possible while updating the system to support redundancy and lifetime requirements of a flagship-class mission. This paper describes the technology plan and progress to reach TRL 6 by the MAR, focusing on near- term plans to reach TRL 5 by the end of March 2022 for the LISA Colloid Microthrusters (CMTs). Work includes requirements development and sizing studies, breadboard and brassboard hardware developments at Busek, including relevant lifetime and environment testing, and lifetime modeling, verification and validation efforts at JPL, UCLA, and UCI.

Gamero-Castaño, Manuel↗

DOE OSTI2016

Molecular dynamics of nanodroplet impact: The effect of the projectile’s molecular mass on sputtering

The impact of electrosprayed nanodroplets on ceramics at several km/s alters the atomic order of the target, causing sputtering, surface amorphization and cratering. The molecular mass of the projectile is known to have a strong effect on the impact phenomenology, and this article aims to rationalize this dependency using molecular dynamics. To achieve this goal, the article models the impact of four projectiles with molecular masses between 45 and 391 amu, and identical diameters and kinetic energies, 10 nm and 63 keV, striking a silicon target. In agreement with experiments, the simulations show that the number of sputtered atoms strongly increases with molecular mass. This is due to the increasing intensity of collision cascades with molecular mass: when the fixed kinetic energy of the projectile is distributed among fewer, more massive molecules, their collisions with the target produce knock-on atoms with higher energies, which in turn generate more energetic and larger numbers of secondary and tertiary knock-on atoms. The more energetic collision cascades intensify both knock-on sputtering and, upon thermalization, thermal sputtering. Besides enhancing sputtering, heavier molecules also increase the fraction of the projectile’s energy that is transferred to the target, as well as the fraction of this energy that is dissipated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Amorphization of hard crystalline materials by electrosprayed nanodroplet impact

A beam of electrosprayed nanodroplets impacting on single-crystal silicon amorphizes a thin surface layer of a thickness comparable to the diameter of the drops. The phase transition occurs at projectile velocities exceeding a threshold, and is caused by the quenching of material melted by the impacts. This article demonstrates that the amorphization of silicon is a general phenomenon, as nanodroplets impacting at sufficient velocity also amorphize other covalently bonded crystals. In particular, we bombard single-crystal wafers of Si, Ge, GaAs, GaP, InAs, and SiC in a range of projectile velocities, and characterize the samples via electron backscatter diffraction and transmission electron microscopy to determine the aggregation state under the surface. InAs requires the lowest projectile velocity to develop an amorphous layer, followed by Ge, Si, GaAs, and GaP. SiC is the only semiconductor that remains fully crystalline, likely due to the relatively low velocities of the beamlets used in this study. The resiliency of each crystal to amorphization correlates well with the specific energy needed to melt it except for Ge, which requires projectile velocities higher than expected.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2013

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409 nm/min for SiC and 2381 nm/min for GaSb. The maximum sputtering rate for GaN is 630 nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2 nm and 20 nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60 nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

36 MATERIALS SCIENCE↗