Garrido-Menacho, Rita

DOE OSTI2021

Imaging and controlling vortex dynamics in mesoscopic superconductor–normal-metal–superconductor arrays

Harnessing the properties of vortices in superconductors is crucial for fundamental science and technological applications; thus, it has been an ongoing goal to locally probe and control vortices. Here, we use a scanning probe technique that enables studies of vortex dynamics in superconducting systems by leveraging the resonant behavior of a raster-scanned, magnetic-tipped cantilever. This experimental setup allows us to image and control vortices, as well as extract key energy scales of the vortex interactions. Applying this technique to lattices of superconductor island arrays on a metal, we obtain a variety of striking spatial patterns that encode information about the energy landscape for vortices in the system. We interpret these patterns in terms of local vortex dynamics and extract the relative strengths of the characteristic energy scales in the system, such as the vortex-magnetic field and vortex-vortex interaction strengths, as well as the vortex chemical potential. We also demonstrate that the relative strengths of the interactions can be tuned and show how these interactions shift with an applied bias. The high degree of tunability and local nature of such vortex imaging and control not only enable new understanding of vortex interactions, but also have potential applications in more complex systems such as those relevant to quantum computing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm 2 V -1 s -1 at carrier density of 4 × 10 12 cm -2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

36 MATERIALS SCIENCE↗