Engineering topics

Gatos, Harry C.

Publications and source records attributed to Gatos, Harry C..

4 records

NASA NTRS1989

Crystal growth of device quality GaAs in space

The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

Gatos, Harry C.↗

NASA NTRS1989

Report of the committee on a commercially developed space facility

Major facilities that could support significant microgravity research and applications activity are discussed. The ground-based facilities include drop towers, aircraft flying parabolic trajectories, and sounding rockets. Facilities that are intrinsically tied to the Space Shuttle range from Get-Away-Special canisters to Spacelab long modules. There are also orbital facilities which include recoverable capsules launched on expendable launch vehicles, free-flying spacecraft, and space stations. Some of these existing, planned, and proposed facilities are non-U.S. in origin, but potentially available to U.S. investigators. In addition, some are governmentally developed and operated whereas others are planned to be privately developed and/or operated. Tables are provided to show the facility, developer, duration, estimated gravity level, crew interaction, flight frequency, year available, power to payload, payload volume, and maximum payload mass. The potential of direct and indirect benefits of manufacturing in space are presented.

Shea, Joseph F.↗

NASA NTRS1988

Growth of GaAs crystals from the melt in a partially confined configuration

The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

Gatos, Harry C.↗

NASA NTRS1977

Semiconductor sensors

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

Gatos, Harry C.↗