Engineering topics
Publications and source records attributed to Gaugh, C..
New family of fast-recovery high-voltage power diodes compatible with D60T and D7ST transistors developed. Have wide range of applications in spacecraft and aircraft electrical distribution equipment, dc/dc inverters, and ac motor controllers for high-horsepower electric motors operating from 480-volt ac lines. Fast-Recovery 1,200-V Power Diodes use chip of hexagonal geometry to maximize effective silicon area.
The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.
The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.