Ghale, Purnima | Search NASA

DOE OSTI2019

Dynamical level-crossing model for the time-dependent electron emission from dielectric surfaces in symmetric dielectric barrier discharges

In field emission plasmas, electrons that initiate plasma formation come from the surface of a metallic electrode, or wall, with emission controlled by the electron-work function of the wall, and can be computed via the Fowler-Nordheim formula. Impinging ions modify the rate at which electrons leave the surface, and are accounted via the coefficient of secondary electron emission. However, in the case of dielectric surfaces, the microscopic mechanism by which electrons are emitted is not as well understood. While simulations of dielectric barrier discharge plasmas assume an initial density of electrons in a time-dependent simulation, whether the presence of electrons is a necessary ambient condition or whether it is a result of emission from a surface is not clear. This is particularly relevant in the context of micro and nanoscale plasma generators when surface-related effects become more important. Here we consider electron emission from dielectric surfaces in the context of dielectric barrier discharges. The configuration of interest consists of two parallel-plate metallic electrodes, each covered by a dielectric layer. Assuming that the initial electrons for plasma formation arise from the surface, we compute the rate of charge transfer from surfaces, which is a necessary, but not sufficient, condition for plasma formation. This paper presents the application of the theory of nonadiabatic transitions (dynamical level crossing) to the problem of electron emission from dielectric surfaces in dielectric barrier discharges. Furthermore, the microscopic model of electron transfer described here has potential applications in the design of micro and nanoscale plasma generators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

A sparse matrix–vector multiplication based algorithm for accurate density matrix computations on systems of millions of atoms

Here we present an efficient sparse matrix–vector (SpMV) based method to compute the density matrix P from a given Hamiltonian in electronic structure computations. Our method is a hybrid approach based on Chebyshev–Jackson approximation theory and matrix purification methods like the second order spectral projection purification (SP2). Recent methods to compute the density matrix scale as O(N) in the number of floating point operations but are accompanied by large memory and communication overhead, and they are based on iterative use of the sparse matrix–matrix multiplication kernel (SpGEMM), which is known to be computationally irregular. In addition to irregularity in the sparse Hamiltonian H, the nonzero structure of intermediate estimates of P depends on products of H and evolves over the course of computation. On the other hand, an expansion of the density matrix P in terms of Chebyshev polynomials is straightforward and SpMV based; however, the resulting density matrix may not satisfy the required constraints exactly. In this paper, we analyze the strengths and weaknesses of the Chebyshev–Jackson polynomials and the second order spectral projection purification (SP2) method, and propose to combine them so that the accurate density matrix can be computed using the SpMV computational kernel only, and without having to store the density matrix P. Our method accomplishes these objectives by using the Chebyshev polynomial estimate as the initial guess for SP2, which is followed by using sparse matrix–vector multiplications (SpMVs) to replicate the behavior of the SP2 algorithm for purification. We demonstrate the method on a tight-binding model system of an oxide material containing more than 3 million atoms. In addition, we also present the predicted behavior of our method when applied to near-metallic Hamiltonians with a wide energy spectrum.

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