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Ghosh, Siddhartha

Publications and source records attributed to Ghosh, Siddhartha.

Reversible hydrogen control of antiferromagnetic anisotropy in α-Fe 2 O 3

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe 2 O 3 (haematite) - now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe 2 O 3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe 2 O 3 .

36 MATERIALS SCIENCE↗

CESM1(WACCM) Stratospheric Aerosol Geoengineering Large Ensemble Project

This paper describes the stratospheric aerosol geoengineering large ensemble (GLENS) project, which promotes the use of an unique model dataset, performed with Community Earth System Model, using the Whole Atmosphere Community Climate Model as its atmospheric component (CESM1(WACCM)), to investigate global and regional impacts of geoengineering. The performed simulations target multiple simultaneous climate goals unlike many earlier studies that targeted globally averaged surface temperature. This strategic approach is expected to reduce some of the previously found adverse effects of stratospheric aerosol geoengineering, including uneven cooling between the poles and equator and shifts in tropical precipitation. An ensemble of 20 members allows the identification of forced changes in global and regional climate variables in the coupled atmosphere, land, sea-ice, and ocean system in the presence of internal variability. Here, we invite the broader community to perform in-depth analysis of climate related impacts and to identify processes that lead to changes in the climate system as the result of a strategic application of stratospheric aerosol geoengineering. (Capsule Summary) A community project that enables analysis of robust global and regional changes resulting from strategic stratospheric aerosol geoengineering in the presence of internal climate variability.

58 GEOSCIENCES↗

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (≤30 ns), excellent endurance (~10 12 cycles), stability (>10 6 s) and scalability (down to ~60 nm 2 ). In situ Raman and ultraviolet–visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Goswami, Sreetosh↗