Kirigami Engineering of Suspended Graphene Transducers
Not Available
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Engineering topics
Gilbert, S. Matt
Publications and source records attributed to Gilbert, S. Matt.
Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. Here, we investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.
2D materials↗
Blue-light-emitting color centers in high-quality hexagonal boron nitride
Light emitters in wide-band-gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe a unique color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent with atomic color centers weakly coupled to lattice vibrations. The emitters are conspicuously absent from commercially available h-BN and are present in only ultrahigh-quality h-BN grown using a high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these emitters originate from impurities or related defects specific to this unique synthetic route. Lastly, our results imply that the light emission is activated and deactivated by electron beam manipulation of the charge state of an impurity-defect complex.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Alternative Stacking Sequences in Hexagonal Boron Nitride
The relative orientation of successive sheets, i.e. the stacking sequence, in layered two-dimensional materials is central to the electronic, thermal, and mechanical properties of the material. Often different stacking sequences have comparable cohesive energy, leading to alternative stable crystal structures. Here we theoretically and experimentally explore different stacking sequences in the van der Waals bonded material hexagonal boron nitride (h-BN). We examine the total energy, electronic bandgap, and dielectric response tensor for five distinct high symmetry stacking sequences for both bulk and bilayer forms of h-BN. Two sequences, the generally assumed AA' sequence and the relatively unknown (for h-BN) AB (Bernal) sequence, are predicted to have comparably low energy. Lastly, we present a scalable modified chemical vapor deposition method that produces large flakes of virtually pure AB stacked h-BN; this new material complements the generally available AA' stacked h-BN.
36 MATERIALS SCIENCE↗
Wafer-scale on-chip synthesis and field emission properties of vertically aligned boron nitride based nanofiber arrays
One dimensional boron nitride (BN) nanomaterials with a high aspect ratio are of great interest due to their unique properties and potential applications. However, BN nanomaterials are generally difficult to synthesize. Here, we describe the creation of arrays of vertically aligned pure BN nanofibers and BN coated carbon nanofibers, fabricated on-chip via a straightforward template-assisted chemical conversion reaction. The template, a glassy carbon nanofiber array, is produced by plasma processing of conventional photoresists. The method is highly controllable, patternable, and scalable, and the final arrays can be fabricated over large areas with a controlled fiber length. We characterize the electron field emission properties of the BN-coated carbon nanofiber array and find a large field enhancement factor, low turn-on voltage, and good stability. The outstanding field emission performance results from the small tip size and high aspect ratio of the nanofiber as well as the high chemical stability and high thermal conductivity of the BN coating.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗