Engineering topics

Goldsmith, John

Publications and source records attributed to Goldsmith, John.

3 records

DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated remarkable performance in many applications, and spalling is a promising technique for reducing device costs by recovering the substrate for reuse. In this study, we investigate the in situ planarization of A-directionally spalled GaAs(100) substrates using metal-organic vapor phase epitaxy (MOVPE) grown C:GaAs with CCl4 as the carbon source. We have characterized the (100)-oriented growth for various CCl4 flow rates and observed that the CCl4 or its by-products promote material diffusion from the facet tops to the underlying valleys. For facets with a height of 5 ..mu..m on a substrate with an A-spall and 6 degreesB -offcut, it took 7 ..mu..m of C:GaAs to planarize the substrate. For a similar sample, with a 6 degreesA -offcut, it required 2 ..mu..m of growth to fill the valleys but there were remnant facets.

III-V↗

DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated exceptional performance across various applications, with controlled crystal fracturing, known as controlled spalling, emerging as a promising method to reduce costs by enabling substrate reuse. Spalling GaAs(100) substrates, a commonly used substrate in III-V photovoltaics, results in faceted ridges that must be planarized to grow high-quality photovoltaic devices. Here, in this study, we demonstrate that a GaAs(100) wafer offcut toward [$0\bar{11}$] and spalled toward [$011$] can be efficiently planarized by growing C:GaAs by metal-organic vapor phase epitaxy (MOVPE) on the surface, with up to 95% of the nominally deposited material used to fill the valleys between ridges. We find that reducing the offcut to 2° enhances the planarizing capability of C:GaAs. A surface morphology model indicates that the density of surface dangling bonds significantly influences the growth evolution of undoped GaAs surfaces. In contrast, the model suggests that the effectiveness of C:GaAs as a smoothing layer stems from modifying the atomic surface structure and, consequently, the associated sticking coefficients of the facets, which can alter the evolution of surface morphology. Our findings provide guidelines for the epitaxial planarization of semiconductor surfaces and improve the understanding of MOVPE growth on nonplanar surfaces.

14 SOLAR ENERGY↗

NASA NTRS1998

Comparison of measurements by the NASA/GSFC scanning raman lidar and the DOE/ARM CART raman lidar

Latent heat transfer through evaporation and condensation of water vapor is the most important energy transport mechanism in the atmosphere. In addition, water vapor is the most active greenhouse gas. Any global warming scenario must take accurate account of the spatial and temporal variation of water vapor in order to account for both of these effects. Due to the great importance of water vapor in atmospheric radiation studies, specific intensive operations periods (IOPs) have been hosted by the Department of Energy's Atmospheric Radiation Measurements (ARM) program. One of the goals of these IOPs has been to determine the quality of and explain any discrepancies among a wide variety of water vapor measuring instruments. Raman lidar systems developed by NASA/Goddard Space Flight Center and DOE/Sandia National Laboratories have participated in the two Water Vapor IOPs (WVIOPs) held at the Southern Great Plains (SGP) Cloud and Radiation Testbed Site (CART) site during 1996 (WVIOP1) and 1997 (WVIOP2). Detailed comparisons of these two systems is ongoing but this effort has already resulted in numerous improvements in design and data analysis for both lidar systems.

Whiteman, David↗