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Goldstein, Bernard

Publications and source records attributed to Goldstein, Bernard.

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Evans, Gary A.

Semiconductor structure and devices

Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

Dinkel, Nancy A.