Engineering topics
Gomez, Jorge
Publications and source records attributed to Gomez, Jorge.
Study of Different Formulations for the Multiperiod Blending Problem Applied to Lithium Recovery from Produced Water
We present several formulations to solve the MPBP for the recovery of REE/CMs from produced water and propose a decomposition approach thatleverages strategies in general disjunctive programming to enhance its performance. We compare these proposed formulations/strategies via two illustrative case studies on recovering lithium from a network of produced water sources.
Study of Different Formulations for the Multiperiod Blending Problem Applied to Lithium Recovery from Produced Water
Demonstrate how to use project PARETO framework for screening different produced water networks and identify critical minerals recovery opportunities. More specifically, demonstrate how different mathematical formulations can have an impact on the solution time.
Ultrathin ferroic HfO 2 –ZrO 2 superlattice gate stack for advanced transistors
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO 2 , which remains the material of choice to date. Here we report HfO 2 –ZrO 2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric–antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms, the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal–oxide–semiconductor capacitors is equivalent to an effective SiO 2 thickness of approximately 6.5 ångströms. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO 2 -based high-dielectric-constant gate stacks without scavenging the interfacial SiO 2 , which has adverse effects on the electron transport and gate leakage current. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. This work demonstrates that ultrathin ferroic HfO 2 –ZrO 2 multilayers, stabilized with competing ferroelectric–antiferroelectric order in the two-nanometre-thickness regime, provide a path towards advanced gate oxide stacks in electronic devices beyond conventional HfO 2 -based high-dielectric-constant materials.