Search NASA⌕ Search

Engineering topics

Grayson, Matthew A.

Publications and source records attributed to Grayson, Matthew A..

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗

Electron subband degeneracy heat pump for cryogenic cooling

An unconventional method of solid-state cryogenic cooling utilizing the electron subband degeneracy of semiconductor heterostructures is discussed in this Letter. The working principle of using the electrons as the working medium to perform cyclic heat pumping under electrostatic subband "expansion" and "compression" is discussed. The calculated base temperature can reach below dilution refrigeration temperatures with the fundamental limit set by electron-phonon interaction. Using an ultra-wide GaAs quantum well as an example, the cooling power per unit volume is estimated to reach $0.85\ \rm \mu W/cm^3$ at $25\ \rm mK$ with a hot-side temperature of $42.5\ \rm mK$, suitable for applications such as quantum computing.

Wang, Chulin↗

Observation of current-induced switching in non-collinear antiferromagnetic IrMn 3 by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

36 MATERIALS SCIENCE↗

The simultaneous integration of many trajectories using nilpotent normal forms

Taylor's formula shows how to approximate a certain class of functions by polynomials. The approximations are arbitrarily good in some neighborhood whenever the function is analytic and they are easy to compute. The main goal is to give an efficient algorithm to approximate a neighborhood of the configuration space of a dynamical system by a nilpotent, explicitly integrable dynamical system. The major areas covered include: an approximating map; the generalized Baker-Campbell-Hausdorff formula; the Picard-Taylor method; the main theorem; simultaneous integration of trajectories; and examples.

Grayson, Matthew A.↗