Oxygen diffusivity in silicon derived from dynamical X-ray diffraction
Thickness dependent Pendelloesung oscillations are highly sensitive to strain fields from defects in a host crystal. Based on this, we present a novel technique to measure the precipitation kinetics of oxygen in silicon already at its early stage of clustering at high temperatures. At 900 Degree-Sign C, precipitates with a radius smaller than 4 nm and with a density of 1 {+-} 0.5 Multiplication-Sign 10{sup 13} 1/cm{sup 3} were observed. The technique was calibrated by complementary scanning transmission electron microscope and energy dispersive X-ray measurements in the range of normal diffusivity yielding a diffusion constant of 1.7 {+-} 0.1 Multiplication-Sign 10{sup -12}cm{sup 2}/s, which is close to the literature value of 2.074 Multiplication-Sign 10{sup -12}cm{sup 2}/s. The measurements have been made with the characteristic K{sub {alpha}1}-line of a high voltage tungsten X-ray tube at 59.31 keV, which provides the opportunity to illuminate through complex sample environments like high temperature scattering furnaces.