Method of temperature compensating semiconductor strain gages Patent
Method for temperature compensating semiconductor gages by exposure to high energy radiation
Engineering topics
Publications and source records attributed to Gross, C..
Method for temperature compensating semiconductor gages by exposure to high energy radiation
Silicon semiconductor irradiated strain gages for precision measurement of low level strain
Electron irradiation for reducing thermal coefficient of resistance of Si strain gages, noting crystal orientation dependence of gage factor
Si semiconductor strain gauge thermal coefficient of resistance /TCR/ reduction by high energy electron irradiation
Proton damage to n and p-type silicon crystals as function of proton energy using hall effect
Measurements of X-rays produced when thick silicon targets are bombarded with 1.05 and 1.25 MeV electrons and comparison to Bethe-Heitler theory
Exposure to high energy electron radiation reduces the temperature coefficients of resistance and gage factor of a range of resistivities of n- and p-type semiconductor silicon strain gages. After irradiation, the gages are heated to a high temperature for a 24-hour period to stabilize their temperature coefficients.
Proton bombardment damage to single crystal germanium
Tables of x-coefficients and lambda-factors for triple angular correlation measurements in nuclear reaction studies