Exploring Mars: science and engineering issues
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in situ instruments↗
Engineering topics
Grunthaner, P.
Publications and source records attributed to Grunthaner, P..
Funding opportunities for in situ instruments
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in situ↗
Thinned Charge Coupled Devices with Flat Focal Planes for UV Imaging
A versatile post-fabrication process to produce thinned, flat, back-illuminated CCDs is being developed at Jet Propulsion Laboratory's Microdevices Laboratory.
Thinning↗
Intergrated Microchemical Analysis System Using DS2 Penetrator Technology for the Enantiomeric Detection of Amino Acids
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Amino Acids enanciomeric detection↗
Delta-Doped CCDs for Ultraviolet and Low-Energy Particle Detection
Delta-Doped CCDs were developed at the Microdevices Laboratory at the Jet Propulsion Laboratory to address quantum efficiency and quantum efficiency hysteresis in UV CCDs.
Particle Detection Delta-Doped CCDs↗
Delta-Doped CCDs for Enhanced UV Performance
Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.
silicon↗
Delta-Doped CCDs as Stable, High Sensitivity, High Resolution UV Imaging Arrays
This oral presentation discusses the delta-doped CCD concept and process.
CCD↗
Chemistry of MOS-LSI radiation hardening
The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.
Grunthaner, P.↗