8-9 and 14-15 mue Two-Color 640X486 AAS/AIGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera
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Engineering topics
Publications and source records attributed to Gunapala, S..
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An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NET, MRDT, uniformity, and operability.
Many commercial and government applications need high performance, large format, long-wavelength infrared (LWIR) detector arrays in the range of 6-20 mu.
Arguably one of the simplest device realizations of the classic - particle-in-a-box - problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP).
An optimized long-wavelength very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed.
In this paper, we discuss and compare the dependence of absorption, responsivity, dark current, and detectivity of QWIPs with the position of first excited state in the quantum well.
Intrinsic infrared detectors in the long-wavelength range (6 - 20 ??are based on interband transition which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band.
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NEAT, uniformity, and operability.
NASA, commercial, medical, and defense applications such as Earth observation systems, astronomy, weather monitoring, thermal mapping, thermography, missile tracking, and night vision aids, etc. require high performance large format long wavelength infrared (LWIR) detector arrays in the range of 8-16 µm.
In this paper, we discuss the development of highly uniform longwavelength QWIPs for astronomical applications.
Quantum Well Infrared Photodetectors (QWIPs) offer greater flexibility than usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored by varying layer thickness (well width), barrier composition (barrier height), and carrier density (well doping density).
We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi-insulating GaAs substrate.
In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128 x 128 QWIP focal plane array camera, hand-held and palmize 256 x 256 long-wavelength QWIP cameras and 648 x 480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
High performance long-wavelength GaAs/AlxGa1-xAs quantum well infrared photodetectors for low background applications have been demonstrated.
The partial intermixing of the well and barrier materials offers unique opportunities to shift locally the bandgap of quantum well structures (QW).
In this paper, we discuss the development of very sensitive long wavelength infrared GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasibound intersubband transition, fabrication of light coupling schemes for efficient light coupling, and demonstration of several long wavelength infrared cameras based on QWIP focal plane arrays.