Development of Medium-Voltage High-Current Vertical GaN Power Devices
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Yates, Luke↗
Engineering topics
Gunning, Brendan Patrick
Publications and source records attributed to Gunning, Brendan Patrick.
Exploring Al(X)Ga(1-X)N Nanostructures Fabricated via Top-Down Chemical Wet Etching.
Abstract not provided.
Kazanowska, Barbara Anna↗
Monolithically Integrated GaN Nanoscale Air Channel Field Emission Diode and Transistor.
Abstract not provided.
Sapkota, Keshab Raj↗
Vertical GaN Power Electronics - Opportunities and Challenges (invited).
Abstract not provided.
Kaplar, Robert↗
High Performance GaN Nanoscale Vacuum Electron Devices in Air.
Abstract not provided.
Wang, George T.↗
Crystallographic Phosphoric Acid etching of GaN AlGaN and AlN Nanostructures.
Abstract not provided.
Kazanowska, Barbara Anna↗
Fully Transparent GaN Homojunction Tunnel Junction-Enabled Cascaded Blue LEDs.
A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.
42 ENGINEERING↗
Solving Current Droop via Cascaded Multi-Junction LEDs (invited).
Abstract not provided.
Armstrong, Andrew↗
Monolithic MOCVD-Grown III-Nitride Tunnel Junctions with Ultra-Low Resistance.
Abstract not provided.
Hasan, Syed M. N.↗
Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes.
Abstract not provided.
Dickerson, Jeramy Ray↗
Field Emission Characteristics of Solid-State GaN-Based Vacuum Nanoelectronic Devices.
Abstract not provided.
Sapkota, Keshab Raj↗