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Guo, Xin

Publications and source records attributed to Guo, Xin.

36 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Ultrathin Li4Ti5O12 nanosheets as anode materials for lithium and sodium storage

Two-dimensional Li4Ti5O12 (LTO) nanosheets are prepared via a surfactant assisted hydrothermal process. Polyether (P123) was added as the surfactant to modify the surface and control the microstructure of the hydrothermal products and thus affect the electrochemical performance of the as-synthesized LTO anode material. XRD results show that the addition of P123 can restrain the growth of Li2TiO3 during the hydrothermal process, thus affecting the morphology and enhancing the rate performance of the final products. With the addition of P123, the growth of LTO can be restrained and ultrathin LTO nanosheets can be obtained after high temperature sintering, which is beneficial for the charge transfer and Li+ ion diffusion. The rate performance of these two different LTO materials is very different because of their differences in phase composition and fine morphology. The P123-assisted nanostructured LTO sample (P-LTO) shows a much higher rate capability than the LTO sample without P123, with over 130 mAh g-1 capacity retained at the charge-discharge rate of 64C when used in a lithium battery. For intercalation of larger size Na+ ions, the P-LTO still exhibit a capacity of 115 mAh g-1 at a charge (de-sodiation process) rate of 10C and maintains 96% capacity after 400 cycles

Environmental Molecular Sciences Laboratory↗
DOE OSTI2016

Origin of selenium–gold interaction in F{sub 2}CSe⋯AuY (Y = CN, F, Cl, Br, OH, and CH{sub 3}): Synergistic effects

Selenium–gold interaction plays an important role in crystal materials, molecular self-assembly, and pharmacochemistry involving gold. In this paper, we unveiled the mechanism and nature of selenium–gold interaction by studying complexes F{sub 2}CSe⋯AuY (Y = CN, F, Cl, Br, OH, and CH{sub 3}). The results showed that the formation of selenium–gold interaction is mainly attributed to the charge transfer from the lone pair of Se atom to the Au—Y anti-bonding orbital. Energy decomposition analysis indicated that the polarization energy is nearly equivalent to or exceeds the electrostatic term in the selenium–gold interaction. Interestingly, the chalcogen–gold interaction becomes stronger with the increase of chalcogen atomic mass in F{sub 2}CX⋯AuCN (X = O, S, Se, and Te). The cyclic ternary complexes are formed with the introduction of NH{sub 3} into F{sub 2}CSe⋯AuY, in which selenium–gold interaction is weakened and selenium–nitrogen interaction is strengthened due to the synergistic effects.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

High-resolution computational algorithms for simulating offshore wind turbines and farms: Model development and validation

The present project involves the development of modeling and analysis design tools for assessing offshore wind turbine technologies. The computational tools developed herein are able to resolve the effects of the coupled interaction of atmospheric turbulence and ocean waves on aerodynamic performance and structural stability and reliability of offshore wind turbines and farms. Laboratory scale experiments have been carried out to derive data sets for validating the computational models.

17 WIND ENERGY↗
DOE OSTI2015

Strain in epitaxial Bi{sub 2}Se{sub 3} grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi{sub 2}Se{sub 3} has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi{sub 2}Se{sub 3} by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi{sub 2}Se{sub 3} grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van der Waals interaction between Bi{sub 2}Se{sub 3} quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi{sub 2}Se{sub 3} deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi{sub 2}Se{sub 3} during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi{sub 2}Se{sub 3} is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Synthesis and characterization of α-MoO{sub 3} nanobelt composite positive electrode materials for lithium battery application

Graphical abstract: (a) TEM image of MoO{sub 3}/PEO nanobelts composite, (b) CV curves of MoO{sub 3}/PEO nanobelts composite. - Highlights: • α-MoO{sub 3} and PEO surfactant MoO{sub 3} nanobelts were synthesized by solvothermal method. • The capacity retention of 12.5 wt% PEO surfactant MoO{sub 3} nanobelts is 88.78%. • The specific capacity of 12.5 wt% PEO surfactant MoO{sub 3} nanobelts is 352 mAh g{sup −1}. • MoO{sub 3}/PEO nanobelts composite material demonstrates good cycling stability as cathode. - Abstract: α-MoO{sub 3} and PEO surfactant MoO{sub 3} nanobelts were synthesized by a solvothermal method. The morphology and nanostructure of samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Bare α-MoO{sub 3} and 12.5 wt% PEO surfactant MoO{sub 3} nanobelts have an initial specific capacities of 279 and 352 mAh g{sup −1}, respectively, at constant current density 30 mA g{sup −1} with potential range of 1.5–4.0 V vs. Li/Li{sup +}. While MoO{sub 3} is modified by the intercalation of PEO, it is effectively shielded against electrostatic interaction between the MoO{sub 3} interlayer and Li{sup +} ions. We reported positive material, a nanocomposite of MoO{sub 3} coated with polyethylene oxide. It presents good cycling stability due to existence of the conductive and protective polyethylene oxide coating and the nanobelt morphology of MoO{sub 3}. The polyethylene oxide acts as a conducting matrix, a binder and an active material, as well as a volume change buffer agent, which holds the MoO{sub 3} particles in place during the discharge cycles. The cyclic voltammograms of the 12.5 wt% PEO surfactant MoO{sub 3} nanobelt composite displayed better cyclic performance compared with pure MoO{sub 3} nanobelts. The specific capacity of the pure MoO{sub 3} nanobelts and 12.5 wt% PEO surfactant MoO{sub 3} nanobelts exhibit as 199 mAh g{sup −1} and 225 mAh g{sup −1}, respectively, after 9 cycles, suggesting that the stability of surfactant material is worthy.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Visible‐Light‐Triggered Molecular Photoswitch Based on Reversible E / Z Isomerization of a 1,2‐Dicyanoethene Derivative

Abstract A designed bis(dithienyl) dicyanoethene‐based, strictly E / Z photoswitch (4TCE) operates through state‐selective ( E and Z isomer) photoactivation with visible light. The E and Z isomers of 4TCE exhibit remarkably different spectroscopic characteristics, including a large separation (70 nm) in their absorption maxima ( λ max ) and a 2.5‐fold increase in molar extinction coefficient from cis to trans . The energetically stable trans form can be completely converted to the cis form within minutes when exposed to white light, whereas the reverse isomerization occurs readily upon irradiation by blue light ( λ <480 nm) or completely by thermal conversion at elevated temperatures. These features together with excellent thermal stability and photostability of both isomers make this new E / Z photoswitch a promising building block for photoswitchable materials that operate without the need for UV light.

Guo, Xin↗
DOE OSTI2015

Visible‐Light‐Triggered Molecular Photoswitch Based on Reversible E / Z Isomerization of a 1,2‐Dicyanoethene Derivative

Abstract A designed bis(dithienyl) dicyanoethene‐based, strictly E / Z photoswitch (4TCE) operates through state‐selective ( E and Z isomer) photoactivation with visible light. The E and Z isomers of 4TCE exhibit remarkably different spectroscopic characteristics, including a large separation (70 nm) in their absorption maxima ( λ max ) and a 2.5‐fold increase in molar extinction coefficient from cis to trans . The energetically stable trans form can be completely converted to the cis form within minutes when exposed to white light, whereas the reverse isomerization occurs readily upon irradiation by blue light ( λ <480 nm) or completely by thermal conversion at elevated temperatures. These features together with excellent thermal stability and photostability of both isomers make this new E / Z photoswitch a promising building block for photoswitchable materials that operate without the need for UV light.

Guo, Xin↗
DOE OSTI2013

Double negative-metamaterial based Terahertz radiation excited by a sheet beam bunch

We describe a new method to generate enhanced terahertz (THz) surface wave (SW) via its coupling with reversed Cherenkov radiation (RCR), excited by a sheet beam bunch which travels in a vacuum above an isotropic double negative metamaterial (DNM). The physical mechanism for the enhancement is that the DNM can support a RCR which can resonantly interact with a sheet electron beam bunch, resulting in an enhanced SW due to its coupling with the enhanced RCR. Numerical results show strong enhancement effect for the SW and RCR in the THz band. This enhanced THz radiation has potential applications to high-power THz radiation sources and Cherenkov detectors which require large signals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Encapsulated human hepatocellular carcinoma cells by alginate gel beads as an in vitro metastasis model

Hepatocellular carcinoma (HCC) is the most common primary liver cancer and often forms metastases, which are the most important prognostic factors. For further elucidation of the mechanism underlying the progression and metastasis of HCC, a culture system mimicking the in vivo tumor microenvironment is needed. In this study, we investigated the metastatic ability of HCC cells cultured within alginate gel (ALG) beads. In the culture system, HCC cells formed spheroids by proliferation and maintained in nuclear abnormalities. The gene and protein expression of metastasis-related molecules was increased in ALG beads, compared with the traditional adhesion culture. Furthermore, several gene expression levels in ALG bead culture system were even closer to liver cancer tissues. More importantly, in vitro invasion assay showed that the invasion cells derived from ALG beads was 7.8-fold higher than adhesion cells. Our results indicated that the in vitro three-dimensional (3D) model based on ALG beads increased metastatic ability compared with adhesion culture, even partly mimicked the in vivo tumor tissues. Moreover, due to the controllable preparation conditions, steady characteristics and production at large-scale, the 3D ALG bead model would become an important tool used in the high-throughput screening of anti-metastasis drugs and the metastatic mechanism research. -- Highlights: •We established a 3D metastasis model mimicking the metastatic ability in vivo. •The invasion ability of cells derived from our model was increased significantly. •The model is easy to reproduce, convenient to handle, and amenable for large-scale.

60 APPLIED LIFE SCIENCES↗
NASA NTRS2005

Evolvable hardware system at extreme low temperatures

This paper describes circuit evolutionary experiments at extreme low temperatures, including the test of all system components at this extreme environment (EE). In addition to hardening-by-process and hardening-by-design, 'hardening-by-reconfiguration ', when applicable, could be used to mitigate drifts, degradation, or damage on electronic devices (chips) in EE, by using re-configurable devices and an adaptive selfreconfiguration of their circuit topology. Conventional circuit design exploits device characteristics within a certain temperature/radiation range; when that is exceeded, the circuit function degrades. On a reconfigurable device, although component parameters change in EE, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. This paper demonstrates this technique for circuit evolution and recovery at liquid nitrogen temperatures (-196.6 (deg)C). In addition, preliminary tests are performed to assess the survivability limitations of the evolutionary processor at extreme low temperatures.

evolvable harware↗
NASA NTRS2005

Reconfiguration of Analog Electronics for Extreme Environments

This paper argues in favor of adaptive reconfiguration as a technique to expand the operational envelope of analog electronics for extreme environments (EE). On a reconfigurable device, although component parameters change in EE, as long as devices still operate, albeit degraded, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. Laboratory demonstrations of this technique were performed by JPL in several independent experiments in which bulk CMOS reconfgurable devices were exposed to, and degraded by, high temperatures (approx.300 C) or radiation (300kRad TID), and then recovered by adaptive reconfiguration using evolutionary search algorithms.

evolutionary search algorithms↗
NASA NTRS2005

Reconfiguration of Analog Electronics for Extreme Environments: Problem or Solution?

This paper argues in favor of adaptive reconfiguration as a technique to expand the operational envelope of analog electronics for extreme environments (EE). In addition to hardening-by-process and hardening-by-design, "hardening-by-reconfiguration", when applicable, could be used to mitigate drifts, degradation, or damage on electronic devices (chips) in EE, by using re-configurable devices and an adaptive self-reconfiguration of their circuit topology. Conventional circuit design exploits device characteristics within a certain temperature/radiation range; when that is exceeded, the circuit function degrades. On a reconfigurable device, although component parameters change in EE, as long as devices still operate, albeit degraded, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. Partly degraded resources are still used, while completely damaged resources are bypassed. Designs suitable for various environmental conditions can be determined prior to operation or can be determined in-situ, by adaptive reconfiguration algorithms running on built-in digital controllers. Laboratory demonstrations of this technique were performed by JPL in several independent experiments in which bulk CMOS reconfigurable devices were exposed to, and degraded by, low temperatures (approx. 196 C), high temperatures (approx.300 C) or radiation (300kRad TID), and then recovered by adaptive reconfiguration using evolutionary search algorithms. Taking this technology from Technology Readiness Level (TRL) 3 to TRL 5 is the target of a current NASA project.

Field Programmable Transistor Array (FPTA)↗
NASA NTRS2004

Self-Recovery Experiments in Extreme Environments Using a Field Programmable Transistor Array

Temperature and radiation tolerant electronics, as well as long life survivability are key capabilities required for future NASA missions. Current approaches to electronics for extreme environments focus on component level robustness and hardening. However, current technology can only ensure very limited lifetime in extreme environments. This paper describes novel experiments that allow adaptive in-situ circuit redesign/reconfiguration during operation in extreme temperature and radiation environments. This technology would complement material/device advancements and increase the mission capability to survive harsh environments. The approach is demonstrated on a mixed-signal programmable chip (FPTA-2), which recovers functionality for temperatures until 28 C and with total radiation dose up to 250kRad.

space vehicle electronics↗
NASA NTRS2003

Silicon validation of evolution-designed circuits

This paper is the first to report on a silicon implementation of circutis evolved in simulation. Several circuits were evolved an fabricated in 0.5 micron CMOS process; this paper focuses on results of logical gates evolved at transistor level. It discusses the steps taken in order to increase the chances of robust and portable designs, summarizes the results of characterization tests based on chip measurements, and comments on the performance comparing to simulations.

evolutionary algorithms↗